The +Suffix has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifications.
General Description
SAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be-
low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes
it an ideal amplifier for demanding base station applications. We offer these units assembled into a com-
plete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP
family of models on our web site.
simplified schematic and pin description
DR AIN
DR AIN 1
4 S OUR C E
G AT E
S OUR C E 2
3 G AT E
S OUR C E
SOT-343 (SC-70) PACKAGE
Function
Source
Gate
Drain
Pin Number
2&4
3
1
Gate used for RF input
Drain used for RF output
Description
Source terminal, normally connected to ground
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical perfor-
mance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
b. The Avago ATF-58143 part number is used for identification and comparison purposes only.
ISO 9001 ISO 14001 AS 9100
CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine
IF/RF MICROWAVE COMPONENTS
Mini-Circuits
®
For detailed performance specs
& shopping online see web site
®
Provides ACTUAL Data Instantly at
minicircuits.com
Notes: 1.
Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet.
2.
Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
3.
The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
REV. C
M123887
ED-13377
SAV-581+
110126
Page 1 of 11
E-PHEMT
Electrical Specifications at T
AMB
=25°C, Frequency 0.45 to 6 GHz
Symbol
V
GS
V
TH
I
DSS
SAV-581+
Parameter
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Condition
DC Specifications
V
DS
=3V, I
DS
=30 mA
V
DS
=3V, I
DS
=4 mA
V
DS
=3V, V
GS
=0 V
V
DS
=3V, Gm=∆ I
DS
/∆V
GS
∆V
GS
=V
GS1
-V
GS2
V
GS1
=V
GS
at I
DS
=30 mA
V
GS2
=V
GS1
+0.05V
V
GD
=V
GS
=-3V
RF Specifications, Z
0
=50 Ohms (Figure 1)
V
DS
=3V, I
DS
=30 mA
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
Min.
0.28
0.18
Typ.
0.39
0.26
1.0
Max.
0.5
0.38
5.0
Units
V
V
µA
G
M
Transconductance
230
327
560
mS
I
GSS
NF
(1)
Gate leakage Current
200
µA
Noise Figure
0.4
0.5
0.8
1.5
0.4
0.5
22.3
17.0
12.0
8.3
22.3
17.0
28.6
30.6
35.2
39.3
27.8
30.3
18.5
19.0
19.2
18.1
19.5
20.5
0.9
dB
V
DS
=4V, I
DS
=30 mA
V
DS
=3V, I
DS
=30 mA
Gain
Gain
V
DS
=4V, I
DS
=30 mA
V
DS
=3V, I
DS
=30 mA
OIP3
Output IP3
V
DS
=4V, I
DS
=30 mA
V
DS
=3V, I
DS
=30 mA
Power output at 1 dB
Compression
V
DS
=4V, I
DS
=30 mA
15.0
18.5
dB
27.0
dBm
P1dB
(2)
dBm
Absolute Maximum Ratings
(3)
Symbol
V
V
GS(4)
V
GD(4)
I
DS(4)
I
GS
P
DISS
P
IN(5)
T
CH
T
OP
T
STD
Θ
JC
(4)
DS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Gate Current
Total Dissipated Power
RF Input Power
Channel Temperature
Operating Temperature
Storage Temperature
Thermal Resistance
Max.
5
-5 to 0.7
-5 to 0.7
100
2
500
17
150
-40 to 85
-65 to 150
160
Units
V
V
V
mA
mA
mW
dBm
°C
°C
°C
°C/W
Notes:
(1) Includes test board loss (tested on Mini-Circuits TB-471+ test board)
(2) During Compression, I
DS
was allowed to increase.
(3) Operation of this device above any one of these parameters may cause permanent damage.
(4) Assumes DC quiescent conditions.
(5) I
GS
is limited to 2 mA during test.
ISO 9001 ISO 14001 AS 9100
CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine
IF/RF MICROWAVE COMPONENTS
Mini-Circuits
®
For detailed performance specs
& shopping online see web site
®
Provides ACTUAL Data Instantly at
minicircuits.com
Notes: 1.
Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet.
2.
Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
3.
The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 2 of 11
E-PHEMT
Characterization Test Circuit
SAV-581+
Fig 1.
Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent Noise Figure meter N8975A and Noise Source N4000A.
Conditions:
1. Drain voltage (with reference to source, V
DS
)= 3 or 4V as shown.
2. Gate Voltage (with reference to source, V
GS
) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
5. No external matching components used.
Fig 2.
Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”)
ISO 9001 ISO 14001 AS 9100
CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine
IF/RF MICROWAVE COMPONENTS
Mini-Circuits
®
For detailed performance specs
& shopping online see web site
®
Provides ACTUAL Data Instantly at
minicircuits.com
Notes: 1.
Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet.
2.
Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
3.
The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
ISO 9001 ISO 14001 AS 9100
CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine
IF/RF MICROWAVE COMPONENTS
Mini-Circuits
®
For detailed performance specs
& shopping online see web site
®
Provides ACTUAL Data Instantly at
minicircuits.com
Notes: 1.
Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet.
2.
Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
3.
The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 4 of 11
E-PHEMT
SAV-581+
GAIN vs IDS @ 0.9 GHz (1)
OIP3 vs IDS @ 2GHz (1)
45
VDS=3V
VDS=4V
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
10
15
20
VDS=3V
VDS=4V
40
OIP3 (dBm)
25
30 35 40
IDS (mA)
45
50
55
60
GAIN (dB)
35
30
25
20
15
10
15
20
25
30
35
40
IDS (mA)
45
50
55
60
OIP3 vs IDS @ 0.9 GHz (1)
45
40
VDS=3V
VDS=4V
25
24
23
22
21
20
19
18
17
16
15
10
15
20
P1dB vs IDS @ 2 GHz (1,4)
VDS=3V
VDS=4V
OIP3 (dBm)
35
30
25
20
15
10
15
20
25
30
35
40
IDS (mA)
45
50
55
60
P1dB (dBm)
25
30
35
40
IDS (mA)
45
50
55
60
P1dB vs IDS @ 0.9 GHz (1,4)
25
24
23
22
21
20
19
18
17
16
15
10
15
20
VDS=3V
VDS=4V
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
-40°C
+25°C
+85°C
25
30
35
40
IDS (mA)
45
50
55
60
NOISE FIGURE (dB)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine
IF/RF MICROWAVE COMPONENTS
Mini-Circuits
®
For detailed performance specs
& shopping online see web site
®
Provides ACTUAL Data Instantly at
minicircuits.com
Notes: 1.
Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet.
2.
Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
3.
The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
玄铁RISC-V活动专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
