LESHAN RADIO COMPANY, LTD.
Zener Voltage Regulator Diodes
LBZX84C2V4LT1G
•
We declare that the material of product compliance with
RoHS requirements.
Series
S-LBZX84C2V4LT1G
Series
3
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
1
2
SOT– 23 (TO–236AB)
PLASTIC
MAXIMUM CASE TEMPERATURE FOR SOLDERING
PURPOSES:
260°C for 10 seconds
3
Cathode
1
Anode
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (Note 2),T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temeprature
Note 1. FR-5 = 1.0 x 0.75 x 0.62 in.
Note 2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
1.8
556
300
2.4
R
QJA
T
J
, T
stg
417
-55to+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
QJA
P
D
Ordering Information
Device
LBZX84C2V4LT1G Series
LBZX84C2V4LT3G Series
Package
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
SOT-23
Rev.A 1/5
LESHAN RADIO COMPANY, LTD.
LBZX84C2V4LT1G Series
S-LBZX84C2V4LT1G Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
V
Z1
(Volts)
@ I
ZT1
= 5 mA
(Note 3)
Device
Marking
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 3)
V
Z3
(V)
@ I
ZT3
= 20 mA
(Note 3)
Max Reverse
Leakage
Current
I
R
mA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
@ Volts
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
q
VZ
(mV/k)
@ I
ZT1
= 5 mA
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
0
0
0
0
0
−2.5
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Device*
LBZX84C2V4LT1G
LBZX84C2V7LT1G
LBZX84C3V0LT1G
LBZX84C3V3LT1G
LBZX84C3V6LT1G
LBZX84C3V9LT1G
LBZX84C4V3LT1G
LBZX84C4V7LT1G
LBZX84C5V1LT1G
LBZX84C5V6LT1G
LBZX84C6V2LT1G
LBZX84C6V8LT1G
LBZX84C7V5LT1G
LBZX84C8V2LT1G
LBZX84C9V1LT1G
LBZX84C10LT1G
LBZX84C11LT1G
LBZX84C12LT1G
LBZX84C13LT1G
LBZX84C15LT1G
LBZX84C16LT1G
LBZX84C18LT1G
LBZX84C20LT1G
LBZX84C22LT1G
LBZX84C24LT1G
Min
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Nom
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
Z
ZT1
(W)
@ I
ZT1
=
5 mA
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
4.7
5.3
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
15.5
17
19
21.1
23.2
25.5
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Min
2.6
3
3.3
3.6
3.9
4.1
4.4
4.5
5
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
Max
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8
8.8
9.7
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Z
ZT3
(W)
@ I
ZT3
=
20 mA
50
50
50
40
40
30
30
15
15
10
6
6
6
6
8
10
10
10
15
20
20
20
20
25
25
C (pF)
@ V
R
= 0
f = 1 MHz
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
V
Z1
Below
@ I
ZT1
= 2 mA
Device
Marking
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
Min
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom
27
30
33
36
39
43
47
51
56
62
68
75
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Device
LBZX84C27LT1G
LBZX84C30LT1G
LBZX84C33LT1G
LBZX84C36LT1G
LBZX84C39LT1G
LBZX84C43LT1G
LBZX84C47LT1G
LBZX84C51LT1G
LBZX84C56LT1G
LBZX84C62LT1G
LBZX84C68LT1G
LBZX84C75LT1G
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
80
80
90
130
150
170
180
200
215
240
255
V
Z2
Below
@ I
ZT2
= 0.1 m-
A
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
V
Z3
Below
@ I
ZT3
= 10 mA
Min
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
73.2
80.2
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
50
55
60
70
80
90
100
110
120
130
140
Max Reverse
Leakage
Current
I
R
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
@
V
R
(V)
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
q
VZ
(mV/k) Below
@ I
ZT1
= 2 mA
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
C (pF)
@ V
R
= 0
f = 1 MHz
70
70
70
70
45
40
40
40
40
35
35
35
Note 3.Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
Rev.A 2/5
LESHAN RADIO COMPANY, LTD.
LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series
TYPICAL CHARACTERISICS
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
8
7
6
5
4
3
2
1
0
-1
-2
-3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
TYPICAL T
C
VALUES
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
I
Z
= 1 mA
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C 25°C
0.6
0°C
1.1
1.2
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
Rev.A 3/5
LESHAN RADIO COMPANY, LTD.
LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series
TYPICAL CHARACTERISICS
1000
1000
0 V BIAS
1 V BIAS
T
A
= 25°C
100
I
R
, LEAKAGE CURRENT (µA)
C, CAPACITANCE (pF)
10
1
0.1
0.01
0.001
0.0001
0.00001
0
10
20
30
40
50
60
70
80
90
100
BIAS AT
50% OF V
Z
NOM
10
+150°C
+25°C
–55°C
1
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
100
T
A
= 25°C
T
A
= 25°C
I
Z
, ZENER CURRENT (mA)
I
Z
, ZENER CURRENT (mA)
10
10
1
1
0.1
0.1
0
0
2
4
6
8
10
12
0.01
10
30
50
70
90
V
Z
, ZENER VOLTAGE (V)
V
Z
, ZENER VOLTAGE (V)
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Rev.A 4/5
LESHAN RADIO COMPANY, LTD.
LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series
SOT-23
NOTES:
A
L
3
1
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
B S
DIM
A
B
C
D
G
H
C
D
H
K
J
J
K
L
S
V
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
A1
G
2
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.A 5/5
嵌入式系统
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