LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V
GS(th)
: 0.5V...1.5V) makes it ideal for low
voltage applications
LBSS138LT1G
S-LBSS138LT1G
3
•
1
2
•
Miniature SOT–23 Surface Mount Package saves board space
•
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
SOT– 23 (TO–236AB)
•
•
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
200 mAMPS
50 VOLTS
R
DS(on)
= 3.5
W
N - Channel
3
ORDERING INFORMATION
Device
LBSS138LT1G
S-LBSS138LT1G
LBSS138LT3G
S-LBSS138LT3G
Package
SOT–23
SOT–23
Shipping
3000 Tape & Reel
10000 Tape & Reel
1
2
MAXIMUM RATINGS (T
A
= 25 C unless otherwise noted)
o
MARKING DIAGRAM
& PIN ASSIGNMENT
Unit
Vdc
Vdc
mA
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp
≤
10
µs)
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J,
T
stg
R
θJA
T
L
Value
50
±
20
200
800
225
1.8
– 55 to
150
556
260
J1
mW
mW/°C
°C
°C/W
°C
J1 = Device Code
M = Month Code
Rev .A 1/5
M
LESHAN RADIO COMPANY, LTD.
LBSS138LT1G,S-LBSS138LT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain–to–Source On–Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= –40°C to +85°C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
C
rss
–
–
–
40
12
3.5
50
25
5.0
pF
V
GS(th)
r
DS(on)
–
–
g
fs
100
5.6
–
–
10
3.5
–
mmhos
0.5
–
1.5
Vdc
Ohms
V
(BR)DSS
I
DSS
–
–
I
GSS
–
–
–
–
0.1
0.5
±0.1
µAdc
50
–
–
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
t
d(on)
t
d(off)
–
–
–
–
20
20
ns
Rev .A 2/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1G,S-LBSS138LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
0.8
0.7
1
VDS=10V
0.6
ID,DRAIN CURRENT(A)
0.8
ID,DRAIN CURRENT(A)
0.5
0.4
0.3
0.2
0.1
0
0.6
0.4
0.2
0
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
3.5
VDS,DRAIN-TO-SOURCE VOLTAGE(V)
VGS=2.50V
VGS=3.25V
VGS=2.75V
VGS=3.5V
VGS=3V
VGS,GATE-TO-SOURCE VOLTAGE(V)
-55℃
25℃
75℃
100℃
125℃
Fig. 1 ON-REGION CHARACTERISTICS
Fig. 2 TRANSFER CHARACTERISTICS
RDS(on),DRAIN-TO-SOURCE RESISTANCE
(Ω)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.05
0.1
0.15
0.2
0.25
0.3
RDS(on),DRAIN-TO-SOURCE RESISTANCE
(Ω)
4
3.5
VGS=2.75V
VGS=4.5V
3
2.5
2
1.5
1
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID,DRAIN CURRENT(A)
-55℃
25℃
75℃
100℃
125℃
-55℃
ID,DRAIN CURRENT(A)
25℃
75℃
100℃
125℃
Fig. 3 ON-RESISTANCE VS. DRAIN CURRENT
AND TEMPERATURE
Fig. 4 ON-RESISTANCE VS. DRAIN CURRENT
AND TEMPERATURE
Rev .A 3/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1G,S-LBSS138LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on),DRAIN-TO-SOURCE RESISTANCE
(Ω)
4
3.5
3
2.5
2
1.5
1
120
100
C,CAPACITANCE(pF)
0
20
40
60
80
100
120
140
80
60
40
20
0.5
0
0
0
5
10
15
20
25
30
35
TJ,JUNCTION TEMPERATURE
(℃)
VGS=4.5V,ID=0.5A
VGS=10V,ID=0.8A
VDS,DRAIN-TO-SOURCE VOLTAGE(V)
Ciss
Coss
Crss
Fig. 5 ON-RESISTANCE VARIATION
WITH TEMPERATURE
Fig. 6 CAPACITANCE VARIATION
2
1
VGS(th),GATE THRESHOLD VOLTAGE(V)
ID=1mA
1.5
VGS=0V
IS,SOURCE CURRENT(A)
0
20
40
60
80
100
120
140
0.1
1
0.01
0.5
0
0.001
0
0.2
0.4
0.6
0.8
1
1.2
T,TEMPERATURE
(℃)
VSD,SOURCE-TO-DRAIN VOLTAGE(V)
-55℃
25℃
75℃
100℃
125℃
Fig. 7 TEMPERATURE VS.GATE
THRESHOLD VOLTAGE
Fig. 8 DIODE FORWARD VOLTAGE VS.CURRENT
Rev .A 4/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1G,S-LBSS138LT1G
SOT-23
NOTES:
A
L
3
1
2
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B S
DIM
A
B
C
D
G
H
J
K
L
S
V
V
G
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .A 5/5
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