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RU4DSG

产品描述GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 1500V CURRENT: 3.0A
产品类别分立半导体    二极管   
文件大小71KB,共2页
制造商Gulf Semiconductor
官网地址http://www.gulfsemi.com/
下载文档 详细参数 全文预览

RU4DSG概述

GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 1500V CURRENT: 3.0A

RU4DSG规格参数

参数名称属性值
厂商名称Gulf Semiconductor
包装说明O-PALF-W2
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性LOW LEAKAGE CURRENT
应用FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.6 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压1500 V
最大反向电流5 µA
最大反向恢复时间0.12 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

文档预览

下载PDF文档
RU4DSG
GLASS PASSIVATED
FAST RECOVERY RECTIFIER
VOLTAGE: 1500V
CURRENT: 3.0A
FEATURE
Molded case feature for auto insertion
High Switching Capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250° /10sec/0.375" lead length at 5 lbs tension
C
Glass Passivated chip
DO - 201AD
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Cj
Trr
Tstg, Tj
RU4DSG
1500
1050
1500
3.0
125
1.6
30
5.0
500.0
50.0
120
-55 to +150
units
V
V
V
A
A
V
µA
µA
pF
nS
°
C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current 3/8"
lead length at Ta =55°
C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at rated
forward current
Maximum full load reverse current full cycle at T
L
=75°
C
Maximum DC Reverse Current
Ta =25°
C
at rated DC blocking voltage
Ta =100°
C
Typical Junction Capacitance
(Note 1)
Maximum Reverse Recovery Time
(Note 2)
Storage and Operation Junction Temperature
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Test Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
Rev.A1
www.gulfsemi.com

 
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