Intel
®
Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
■
High Performance Read-While-Write/Erase
■
Flash Architecture
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst- and Page-Mode in All Blocks and
across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 µs per Word Program Time
— Programmable WAIT Signal Polarity
■
Flash Power
— V
CC
= 1.70 V – 1.90 V
— V
CCQ
= 2.20 V – 3.30 V
— Standby Current (130 nm) = 8 µA (typ.)
— Read Current = 7 mA
(4 word burst, typ.)
■
Flash Software
— 5 µs/9 µs (typ.) Program/Erase Suspend
Latency Time
— Intel
®
Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
■
Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 130 nm ETOX™ VIII Process
— 180 nm ETOX™ VII Process
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top and Bottom Parameter Devices
■
Flash Security
— 128-bit Protection Register: 64 Unique Device
Identifier Bits; 64 User OTP Protection
Register Bits
— Absolute Write Protection with V
PP
at Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block Locking/
Unlocking with Lock-Down
■
Density and Packaging
— 130 nm: 32Mb, 64Mb, and 128Mb in VF BGA
Package; 64Mb, 128Mb in QUAD+ Package
— 180 nm: 32Mb and 128Mb Densities in VF
BGA Package; 64Mb Density in µBGA*
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
The Intel
®
Wireless Flash Memory (W30) device combines state-of-the-art Intel
®
Flash
technology to provide the most versatile memory solution for high performance, low power,
board constraint memory applications. The W30 device offers a multi-partition, dual-operation
flash architecture that enables the device to read from one partition while programming or
erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it
possible to achieve higher data throughput rates as compared to single partition devices,
allowing two processors to interleave code execution because program and erase operations can
now occur as background processes.
The W30 device incorporates a new Enhanced Factory Programming (EFP) mode to improve 12
V factory programming performance. This new feature helps eliminate manufacturing
bottlenecks associated with programming high density flash devices. Compare the EFP program
time of 3.5 µs per word to the standard factory program time of 8.0 µs per word and save
significant factory programming time for improved factory efficiency.
Additionally, the W30 device includes block lock-down and programmable WAIT signal
polarity, and is supported by an array of software tools. All these features make this product a
perfect solution for any demanding memory application.
Notice:
This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the lat-
est datasheet before finalizing a design.
290702-010
December 2004
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL
®
PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The Intel
®
Wireless Flash Memory (W30) may contain design defects or errors known as errata which may cause the product to deviate from
published specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-
548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © 2004, Intel Corporation.
*Other names and brands may be claimed as the property of others.
Datasheet
2
28F320W30, 28F640W30, 28F128W30
Contents
1.0
Introduction
..................................................................................................................9
1.1
1.2
1.3
Document Purpose................................................................................................9
Nomenclature ........................................................................................................9
Conventions ..........................................................................................................9
Overview .............................................................................................................11
Memory Map and Partitioning .............................................................................12
W30 – 130 nm Lithography .................................................................................15
W30 – 180 nm Lithography .................................................................................17
Signal Ballout ......................................................................................................20
Signal Descriptions..............................................................................................22
Absolute Maximum Ratings.................................................................................23
Operating Conditions...........................................................................................23
2.0
Functional Overview
...............................................................................................11
2.1
2.2
3.0
Package Information
...............................................................................................15
3.1
3.2
4.0
Ballout and Signal Descriptions
........................................................................20
4.1
4.2
5.0
Maximum Ratings and Operating Conditions
..............................................23
5.1
5.2
6.0
Electrical Specifications
........................................................................................25
6.1
6.2
DC Current Characteristics .................................................................................25
DC Voltage Characteristics .................................................................................26
Read Operations - 130 nm Lithography ..............................................................27
Read Operations - 180 nm Lithography ..............................................................29
AC Write Characteristics .....................................................................................39
Erase and Program Times ..................................................................................43
Active Power .......................................................................................................44
Automatic Power Savings (APS).........................................................................44
Standby Power ....................................................................................................44
Power-Up/Down Characteristics .........................................................................45
8.4.1 System Reset and RST# ........................................................................45
8.4.2 VCC, VPP, and RST# Transitions ..........................................................45
Power Supply Decoupling ...................................................................................45
Reset Specifications............................................................................................46
AC I/O Test Conditions........................................................................................47
Device Capacitance ............................................................................................48
Bus Operations....................................................................................................48
9.1.1 Read .......................................................................................................48
9.1.2 Burst Suspend........................................................................................49
7.0
AC Characteristics
...................................................................................................27
7.1
7.2
7.3
7.4
8.0
Power and Reset Specifications
........................................................................44
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
9.0
Device Operations
...................................................................................................48
9.1
Datasheet
3
28F320W30, 28F640W30, 28F128W30
9.2
9.3
9.1.3 Standby .................................................................................................. 50
9.1.4 Reset ...................................................................................................... 50
9.1.5 Write ....................................................................................................... 50
Device Commands .............................................................................................. 51
Command Sequencing........................................................................................ 54
Read Array .......................................................................................................... 55
Read Device ID ................................................................................................... 55
Read Query (CFI)................................................................................................ 56
Read Status Register .......................................................................................... 56
Clear Status Register .......................................................................................... 58
Word Program ..................................................................................................... 58
Factory Programming.......................................................................................... 59
Enhanced Factory Program (EFP) ...................................................................... 60
11.3.1 EFP Requirements and Considerations ................................................. 60
11.3.2 Setup ...................................................................................................... 61
11.3.3 Program ................................................................................................. 61
11.3.4 Verify ...................................................................................................... 61
11.3.5 Exit ......................................................................................................... 62
Program/Erase Suspend and Resume ............................................................... 64
Block Erase ......................................................................................................... 66
Read-While-Write and Read-While-Erase .......................................................... 68
Block Lock Operations ........................................................................................ 69
13.1.1 Lock........................................................................................................ 70
13.1.2 Unlock .................................................................................................... 70
13.1.3 Lock-Down ............................................................................................. 70
13.1.4 Block Lock Status................................................................................... 71
13.1.5 Lock During Erase Suspend .................................................................. 71
13.1.6 Status Register Error Checking.............................................................. 71
13.1.7 WP# Lock-Down Control ........................................................................ 72
Protection Register.............................................................................................. 72
13.2.1 Reading the Protection Register ............................................................ 73
13.2.2 Programing the Protection Register ....................................................... 73
13.2.3 Locking the Protection Register ............................................................. 74
VPP Protection .................................................................................................... 75
Read Mode (RCR[15]) ........................................................................................ 78
First Access Latency Count (RCR[13:11]) .......................................................... 78
14.2.1 Latency Count Settings .......................................................................... 79
WAIT Signal Polarity (RCR[10]) .......................................................................... 79
WAIT Signal Function ......................................................................................... 79
Data Hold (RCR[9]) ............................................................................................. 80
WAIT Delay (RCR[8]) .......................................................................................... 81
10.0
Read Operations
....................................................................................................... 55
10.1
10.2
10.3
10.4
10.5
11.0
Program Operations
............................................................................................... 58
11.1
11.2
11.3
12.0
Program and Erase Operations
.......................................................................... 64
12.1
12.2
12.3
13.0
Security Modes
......................................................................................................... 69
13.1
13.2
13.3
14.0
Set Read Configuration Register
....................................................................... 76
14.1
14.2
14.3
14.4
14.5
14.6
4
Datasheet
28F320W30, 28F640W30, 28F128W30
14.7
14.8
14.9
14.10
Burst Sequence (RCR[7])....................................................................................81
Clock Edge (RCR[6])...........................................................................................83
Burst Wrap (RCR[3]) ...........................................................................................83
Burst Length (RCR[2:0])......................................................................................83
Appendix A Write State Machine
.............................................................................................84
Appendix B Common Flash Interface
....................................................................................87
Appendix C Ordering Information
...........................................................................................97
Datasheet
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
