SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AA (SMBJ)
Cathode Band
Breakdown Voltage
6.8 to 220V
Peak Pulse Power
600W
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.106 MAX
(2.69 MAX)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.083 MIN
(2.10 MIN)
0.050 MIN
(1.27 MIN)
0.220 REF
0.096 (2.44)
0.084 (2.13)
Dimensions in inches
and (millimeters)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008
(0.203)
Max.
Mechanical Data
Case:
JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging:
12mm tape (EIA STD RS-481)
Weight:
0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7” plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton
Features
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low inductance
• Excellent clamping capability
• Repetition rate (duty cycle): 0.01%
• Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V
(BR)
for
unidirectional and 5ns for bidirectional types
• High temperature soldering: 250°C/10 seconds at
terminals
• Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation on
10/1000µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
Power dissipation on infinite heatsink, T
A
= 50°C
Peak forward surge current 10ms single half sine-wave
uni-directional only
(2)
Thermal resistance junction to ambient air
(3)
Thermal resistance junction to leads
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
Minimum 600
See Next Table
5.0
100
100
20
–65 to +150
Unit
W
A
W
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88385
09-Oct-02
www.vishay.com
1
SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Type
(1)
Device
Marking
Code
UNI
BI
Breakdown Voltage
V
BR
@ I
T
(2)
I
T
(V)
Min
Max
Test
Current
(mA)
Standoff
Voltage
V
RM
(V)
Leakage
Current
(3)
I
RM
@V
RM
(µA)
Clamping Voltage
V
C
@ I
PP
10/1000µs
(V)
(A)
Clamping Voltage
V
C
@ I
PP
8/20µs
(V)
(A)
α
T
Max
0
-4
/
O
C
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
KK7
KT7
KX7
LG7
LM7
LT7
LV7
LX7
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
KE7
AK7
AT7
AX7
LG7
BM7
BT7
LV7
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
190
209
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
158
210
231
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
171
188
1000
500
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
207
274
328
57.0
53.0
41.0
36.0
28.0
24.0
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
178
265
353
388
298
276
215
184
147
123
102
93
83
75
68
62
57
33
22.5
15
11.3
10.3
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
Notes:
(1) For bi-directional devices add suffix
“CA”.
(2) V
BR
measured after I
T
applied for 300µs square wave pulse.
(3) For bipolar devices with V
R
=10 Volts or under, the I
T
limit is doubled.
www.vishay.com
2
Document Number 88385
09-Oct-02
SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
75
10
50
1
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
0
0
25
50
75
100
125
150
175
200
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
6,000
Fig. 4 – Typical Junction Capacitance
C
J
— Junction Capacitance (pF)
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
V
R
, Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
100
200
td
0
0
1.0
2.0
3.0
4.0
10
1
10
t — Time (ms)
V
WM
— Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
100
200
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
100
Transient Thermal Impedance (°C/W)
10
1.0
0.1
0.001
10
0.01
0.1
1
10
100
1000
1
10
100
t
p
— Pulse Duration (sec)
Number of Cycles at 60H
Z
Document Number 88385
09-Oct-02
www.vishay.com
3
Microchip MCU
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