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25C160-I/SNC64

产品描述2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8
产品类别存储    存储   
文件大小306KB,共22页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
下载文档 详细参数 全文预览

25C160-I/SNC64概述

2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8

25C160-I/SNC64规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codecompli
ECCN代码EAR99
最大时钟频率 (fCLK)3 MHz
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度16384 bi
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.75 mm
串行总线类型SPI
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
宽度3.91 mm
最长写入周期时间 (tWC)5 ms
Base Number Matches1

文档预览

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Not recommended for new designs –
Please use 25AA160A/B or 25LC160A/B.
25AA160/25LC160/25C160
16K SPI Bus Serial EEPROM
Device Selection Table
Part
Number
25AA160
25LC160
25C160
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max Clock
Frequency
1 MHz
2 MHz
3 MHz
Temp
Ranges
I
I
I,E
Description:
The Microchip Technology Inc. 25AA160/25LC160/
25C160 (25XX160
*
) are 16 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
Features:
• Low-power CMOS technology:
- Write current: 3 mA maximum
- Read current: 500
A
typical
- Standby current: 500 nA typical
• 2048 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection:
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability:
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC packages
• Temperature ranges supported:
- Industrial (I):
- Automotive (E) (25C160):
-40C to +85C
-40°C to +125°C
Package Types
PDIP/SOIC
CS
SO
WP
V
SS
1
25XX160
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Block Diagram
Status
Register
HV Generator
I/O Control
Logic
Memory
Control
Logic
X
Dec
EEPROM
Array
Page Latches
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Y Decoder
Sense Amp.
R/W Control
1997-2012 Microchip Technology Inc.
DS21231E-page 1

 
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