电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MR820

产品描述\"Diode
产品类别分立半导体    二极管   
文件大小62KB,共1页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 详细参数 选型对比 全文预览

MR820在线购买

供应商 器件名称 价格 最低购买 库存  
MR820 - - 点击查看 点击购买

MR820概述

\"Diode

MR820规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknown

文档预览

下载PDF文档
<£emi-£onclu<2toi
20 STERN AVE.
SPRINGFIELD NEW JERSEY 07081
U.S.A.
,
One.
TELEPHONE: (973) 376-2922
(212)227-6005
MR 820...MR 828
Type
Repetitive peak
reverse voltage
Surge peak
reverse voltage
Max. reverse
recovery time
Max
forward
voltage
IF = 0,5 A
I
R
=1A
I
RR
= 0,25A
"RRM
V
MR
MR
MR
MR
MR
820
821
822
824
826
50
"RSM
V
50
V
ns
300
300
1,2
1,2
1,2
1,2
1,2
1,2
100
200
400
600
800
100
200
400
600
800
Axial lead diode
Fast silicon rectifier
diodes
MR 820...MR 828
Forward Current: 5 A
Reverse Voltage: 50 to 1000 V
300
300
300
300
MR 828
Absolute 1Maximum Ratings
Symbol Conditions
'FAV
Tc = 25
6
C , unless otherwise specified
Units
Values
5
60
300
450
20
-
-50.. .+150
-50.. .+ 175
A
A
A
A
2
s
K/W
KM
°C
°C
Max. averaged fwd. current, R-load, T
A
= 50 °C
1)
Repetitive peak forward current f > 15 Hz
1)
Peak forward surge current 50 Hz half sinus-wave
3)
Rating for fusing, t
<
1 0 ms
3)
Max. thermal resistance junction to ambient
1)
Max. thermal resistance junction to terminals
1
>
Operating junction temperature
Storage temperature
'FRM
'FSM
i
2
t
R
thA
Features
. Max, solder temperature: 260°C
. Plastic material has UL
classification 94V-0
R,hT
T
|
T
s
Mechanical Data
. Plastic case 8 x 7,5 [mm]
. Weight approx.: 1,5 g
. Terminals: plated terminals
solderable per MIL-STD-750
. Mounting position: any
. Standard packaging: 500 pieces
per ammo
1) Valid, if leads are kept at ambient
temperature at a distance of 10 mm from
case
2) I
F
= 5 A, T
j
=25°C
3) T, = 25 °C
Character sties
Symbol Conditions
'R
T
i
Tc = 25°C , unless otherwise specified
Values
Units
<25
MA
Maximum leakage current, T
(
= 25 °C; V
R
= V
RRM
= °
C
:
V
R
= V
RRM
Cj
Typical junction capacitance
(at MHz and applied reverse voltage of V)
-
pF
Qrr
Reverse recovery charge
(U
R
= V; I
F
= A; dl
F
/dt = A/ms)
-
UC
ERSM
Non repetitive peak reverse avalanche energy
(I
R
= mA; T: = °C; inductive load switched off)
-
mj
Dimensions in mm
62.5^0.5
case:
8 x 7,5 [mm]
Onolitv

MR820相似产品对比

MR820 MR822 MR826 MR821 MR821RL MR824
描述 \"Diode \"Diode \"Diode \"Diode \"Diode \"Diode
厂商名称 New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown unknown

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2188  1123  57  763  963  8  25  33  31  46 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved