Non-Volatile SRAM, 8KX8, 25ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Simtek |
包装说明 | DIP, DIP28,.3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 25 ns |
JESD-30 代码 | R-CDIP-T28 |
JESD-609代码 | e0 |
长度 | 35.56 mm |
内存密度 | 65536 bit |
内存集成电路类型 | NON-VOLATILE SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 28 |
字数 | 8192 words |
字数代码 | 8000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 8KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP |
封装等效代码 | DIP28,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 4.14 mm |
最大待机电流 | 0.003 A |
最大压摆率 | 0.095 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Lead (Sn85Pb15) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
STK12C68-C25IM | STK12C68-C45IM | STK12C68-K45IM | STK12C68-C35IM | STK12C68-L45IM | STK12C68-K35IM | STK12C68-L35IM | STK12C68-L25IM | |
---|---|---|---|---|---|---|---|---|
描述 | Non-Volatile SRAM, 8KX8, 25ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28 | Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 | Non-Volatile SRAM, 8KX8, 25ns, CMOS, CQCC28, CERAMIC, LCC-28 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | QCCN, LCC28,.35X.55 | DIP, DIP28,.3 | QCCN, LCC28,.35X.55 | QCCN, LCC28,.35X.55 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 25 ns | 45 ns | 45 ns | 35 ns | 45 ns | 35 ns | 35 ns | 25 ns |
JESD-30 代码 | R-CDIP-T28 | R-CDIP-T28 | R-CDIP-T28 | R-CDIP-T28 | R-CQCC-N28 | R-CDIP-T28 | R-CQCC-N28 | R-CQCC-N28 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 35.56 mm | 35.56 mm | 35.56 mm | 35.56 mm | 13.97 mm | 35.56 mm | 13.97 mm | 13.97 mm |
内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
内存集成电路类型 | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP | DIP | DIP | DIP | QCCN | DIP | QCCN | QCCN |
封装等效代码 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | LCC28,.35X.55 | DIP28,.3 | LCC28,.35X.55 | LCC28,.35X.55 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | 240 | 240 | 240 | NOT APPLICABLE | 240 | 240 | NOT SPECIFIED |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 4.14 mm | 4.14 mm | 4.14 mm | 4.14 mm | 2.29 mm | 4.14 mm | 2.29 mm | 2.29 mm |
最大待机电流 | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A |
最大压摆率 | 0.095 mA | 0.08 mA | 0.08 mA | 0.085 mA | 0.08 mA | 0.085 mA | 0.085 mA | 0.095 mA |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | YES | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | QUAD | DUAL | QUAD | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | 30 | NOT APPLICABLE | 30 | 30 | NOT SPECIFIED |
宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 8.89 mm | 7.62 mm | 8.89 mm | 8.89 mm |
厂商名称 | Simtek | - | Simtek | Simtek | Simtek | Simtek | Simtek | Simtek |
湿度敏感等级 | - | 3 | 3 | 3 | - | 3 | 3 | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved