1N5402G: 产品描述3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD; 产品类别分立半导体二极管; 文件大小99KB，共2页; 制造商Gulf Semiconductor; 官网地址http://www.gulfsemi.com/; 标准

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1N5402G概述

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Gulf Semiconductor
包装说明	O-PALF-W2
Reach Compliance Code	unknow
其他特性	LOW LEAKAGE CURRENT
应用	GENERAL PURPOSE
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.1 V
JEDEC-95代码	DO-201AD
JESD-30 代码	O-PALF-W2
湿度敏感等级	1
最大非重复峰值正向电流	180 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	3 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	200 V
最大反向电流	5 µA
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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1N5400G THRU 1N5408G

GLASS PASSIVATED

JUNCTION RECTIFIER

VOLTAGE: 50V to 1000V

CURRENT: 3.0A

FEATURE

Molded case feature for auto insertion

High current capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250°C /10sec/0.375" lead length at 5 lbs tension

Glass Passivated chip

DO - 201AD

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

Symbol

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8" lead length at T

=105°

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current

Maximum full load reverse current full cycle at

=75°

Maximum DC Reverse Current

Ta =25°

at rated DC blocking voltage

Ta =100°

Typical Junction Capacitance

(Note 1)

Typical Thermal Resistance

(Note 2)

Storage and Operating Junction Temperature

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted

Vrrm

Vrms

Vdc

If(av)

Ifsm

Ir(av)

Rth(ja)

Tstg, Tj

1N5

400

1N5

401

100

1N5

402

200

140

200

1N5

403

300

210

300

1N5

404

400

280

400

3.0

180

1.1

30.0

1N5

405

500

350

500

1N5

406

600

420

600

1N5

407

800

560

800

1N5

408

1000

700

1000

units

µA

C/W

5.0

300.0

-55 to +150

Rev.A2

www.gulfsemi.com

1N5402G相似产品对比

	1N5402G	1N5400G	1N5404G	1N5407G	1N5406G	1N5408G
描述	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
其他特性	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
应用	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95代码	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
湿度敏感等级	1	1	1	1	1	1
最大非重复峰值正向电流	180 A	180 A	180 A	180 A	180 A	180 A
元件数量	1	1	1	1	1	1
相数	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	3 A	3 A	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	200 V	50 V	400 V	800 V	600 V	1000 V
最大反向电流	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

1N5402G

1N5402G在线购买

1N5402G概述

1N5402G规格参数

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