MAC15 Series
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid−state relays, motor controls, heating controls and power
supplies; or wherever full−wave silicon gate controlled solid−state
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.
Features
http://onsemi.com
•
Blocking Voltage to 800 V
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage Note 1
(T
J
=
−40
to +125°C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC15A6G
MAC15−8G, MAC15A8G
MAC15−10G, MAC15A10G
Peak Gate Voltage
(Pulse Width
v
1.0
msec;
T
C
= 90°C)
On−State Current RMS; Full Cycle Sine
Wave 50 to 60 Hz (T
C
= +90°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Non−Repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T
C
= +80°C)
Preceded and Followed by Rated Current
Peak Gate Power
(T
C
= +80°C, Pulse Width = 1.0
ms)
Average Gate Power (T
C
= +80°C, t = 8.3 ms)
Peak Gate Current
(Pulse Width
v
1.0
msec;
T
C
= 90°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
Value
Unit
V
400
600
800
10
15
93
150
V
A
A
2
s
A
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 4
1
2
MAC15xxG
AYWW
V
GM
I
T(RMS)
I
2
t
I
TSM
3
= Specific Device Code
= See Table on Page 2
= Assembly Location (Optional)*
= Year
= Work Week
= Pb−Free Package
MAC15xx
xx
A
Y
WW
G
P
GM
P
G(AV)
I
GM
T
J
T
stg
20
0.5
2.0
−40
to +125
−40
to +150
W
W
A
°C
°C
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
September, 2012
−
Rev. 5
1
Publication Order Number:
MAC15A4/D
MAC15 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Value
2.0
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage Note 2 (I
TM
=
"21
A Peak)
Gate Trigger Current (Continuous dc) (V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+) “A’’ SUFFIX ONLY
Gate Trigger Voltage (Continuous dc) (V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+) “A’’ SUFFIX ONLY
Gate Non−Trigger Voltage (V
D
= 12 V, R
L
= 100
W)
T
J
= 110°C)
MT2(+), G(+); MT2(−), G(−); MT2(+), G(−)
MT2(−), G(+) “A’’ SUFFIX ONLY
Holding Current (V
D
= 12 Vdc, Gate Open, Initiating Current =
"200
mA)
Turn-On Time (V
D
= Rated V
DRM
, I
TM
= 17 A)
(I
GT
= 120 mA, Rise Time = 0.1
ms,
Pulse Width = 2
ms)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (V
D
= Rated V
DRM
, I
TM
= 21 A,
Commutating di/dt = 7.6 A/ms, Gate Unenergized, T
C
= 80°C)
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt(c)
−
5.0
−
V/ms
V
TM
I
GT
−
−
−
−
−
−
−
−
−
0.2
0.2
−
−
1.3
−
−
−
−
0.9
0.9
1.1
1.4
−
−
6.0
1.5
1.6
50
50
50
75
2
2
2
2.5
−
−
40
−
V
mA
T
J
= 25°C
T
J
= 125°C
I
DRM,
I
RRM
−
−
−
−
10
2.0
mA
mA
Symbol
Min
Typ
Max
Unit
V
GT
V
V
GD
V
I
H
t
gt
mA
ms
ORDERING INFORMATION
Device
MAC15−8G
MAC15−10G
MAC15A6G
MAC15A8G
MAC15A10G
Device Marking
MAC15−8
MAC1510
MAC15A6
MAC15A8
MAC15A10
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
500 Units Bulk
Shipping
http://onsemi.com
2
MAC15 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
MAC15 Series
130
α
= 30°
α
= 60°
α
= 90°
α
= 180°
α
90
80
0
α
α
= CONDUCTION ANGLE
2
4
6
8
10
12
14
16
I
T(RMS),
RMS ON-STATE CURRENT (AMP)
dc
T
J
≈
125°
PAV, AVERAGE POWER (WATTS)
20
α
= 180°
16
T
J
≈
125°
α
α
8
α
= CONDUCTION ANGLE
120°
dc
90°
60°
30°
TC, CASE TEMPERATURE (
°
C)
120
110
12
100
4
0
0
2
4
6
8
10
12
14
16
I
T(RMS),
ON-STATE CURRENT (AMP)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
1.8
VGT, GATE TRIGGER VOLTAGE (VOLTS)
1.6
1.4
1.2
1.0
0.8
QUADRANTS
0.6
0.4
-60
-40
-20
1
2
3
0
20
40
60
80
100
120
140
QUADRANT 4
IGT, GATE TRIGGER CURRENT (mA)
OFF-STATE VOLTAGE = 12 V
50
OFF-STATE VOLTAGE = 12 V
30
20
10
7.0
5.0
-60
1
2
QUADRANT 3
4
-40
-20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
http://onsemi.com
4
MAC15 Series
100
70
50
T
J
= 25°C
125°C
30
20
I H, HOLDING CURRENT (mA)
10
7.0
5.0
MAIN TERMINAL #2
POSITIVE
3.0
2.0
-60
20
MAIN TERMINAL #1
POSITIVE
GATE OPEN
i TM INSTANTANEOUS FORWARD CURRENT (AMP)
,
10
7
5
-40
-20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Holding Current
3
2
300
TSM, PEAK SURGE CURRENT (AMP)
1
0.7
0.5
200
100
70
50
T
C
= 80°C
T
f = 60 Hz
Surge is preceded and followed by rated current
0.3
0.2
0.1
0.4
30
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
1
2
3
NUMBER OF CYCLES
5
7
10
v
TM
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. On−State Characteristics
Figure 7. Maximum Non−Repetitive
Surge Current
1
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.5
0.2
0.1
0.05
Z
qJC(t)
= r(t)
•
R
qJC
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1k
2k
5k
10 k
t, TIME (ms)
Figure 8. Thermal Response
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
