EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown |
| 访问模式 | FAST PAGE WITH EDO |
| 最长访问时间 | 50 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-G50 |
| JESD-609代码 | e0 |
| 内存密度 | 67108864 bit |
| 内存集成电路类型 | EDO DRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 50 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4MX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSOP |
| 封装等效代码 | TSOP50,.46,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 自我刷新 | NO |
| 最大待机电流 | 0.002 A |
| 最大压摆率 | 0.18 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 0.8 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| EDI4164MEV50SM | EDI4164MEV70SM | EDI4164MEV50SI | EDI4164MEV60SI | EDI4164MEV60SM | EDI4164MEV70SI | |
|---|---|---|---|---|---|---|
| 描述 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| 最长访问时间 | 50 ns | 70 ns | 50 ns | 60 ns | 60 ns | 70 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit |
| 内存集成电路类型 | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 50 | 50 | 50 | 50 | 50 | 50 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 85 °C | 85 °C | 125 °C | 85 °C |
| 最低工作温度 | -55 °C | -55 °C | -40 °C | -40 °C | -55 °C | -40 °C |
| 组织 | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSOP | TSOP | TSOP | TSOP | TSOP | TSOP |
| 封装等效代码 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 自我刷新 | NO | NO | NO | NO | NO | NO |
| 最大待机电流 | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
| 最大压摆率 | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | INDUSTRIAL | INDUSTRIAL | MILITARY | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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