CM1451
LCD and Camera EMI Filter
Array with ESD Protection
Description
The CM1451 is an inductor−capacitor (L−C) based EMI filter array
with integrated ESD protection in CSP. The CM1451−06 and
CM1451−08 are configured in 6 and 8 channel formats respectively.
Each channel is implemented as a 5−pole L−C filter with the
component values 9.5 pF
−
17 nH
−
9.5 pF
−
17 nF
−
9.5 pF. The
CM1451’s roll−off frequency at
−10
dB attenuation is 500 MHz. It can
be used in applications where the data rates are as high as 200 Mbps
while providing greater than 35 dB attenuation over the 800 MHz to
2.7 GHz frequency range. The device has ESD protection diodes on
every pin that provide a very high level of protection for sensitive
electronic components that may be subjected to electrostatic discharge
(ESD). The ESD protection diodes connected to the filter ports safely
dissipate ESD strikes of
±15
kV, exceeding the Level 4 requirement of
the IEC61000−4−2 international standard. Using the MIL−STD−883
(Method 3015) specification for Human Body Model (HBM) ESD, the
pins are protected for contact discharges at greater than
±30
kV.
This device is particularly well−suited for portable electronics (e.g.
wireless handsets, PDAs) because of its small package format and
easy−to−use pin assignments. In particular, the CM1451 is ideal for
EMI filtering and protecting data and control lines for the LCD display
and camera interface in wireless handsets while maintaining the
integrity of signals that have rise/fall times as fast as 2 ns.
The CM1451 incorporates OptiGuard, a coating that results in
improved reliability at assembly. The CM1451 is available in a
space−saving, low−profile Chip Scale Package with RoHS compliant
lead−free finishing.
Features
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WLCSP15
CP SUFFIX
CASE 567BT
WLCSP20
CP SUFFIX
CASE 567CL
MARKING DIAGRAM
N516
CM1451−06
15−Bump CSP Package
N516
N518
N518
CM1451−08
20−Bump CSP Package
= CM1451−06CP
= CM1451−08CP
ORDERING INFORMATION
Device
CM1451−06CP
CM1451−08CP
Package
CSP−15
(Pb−Free)
CSP−20
(Pb−Free)
Shipping
†
3500/Tape & Reel
3500/Tape & Reel
•
High Bandwidth, High RF Rejection Filter Array
•
Six and Eight Channels of EMI Filtering
•
Utilizes Inductor−Based Design Technology for True L−C Filter
•
•
•
•
•
•
Implementation
OptiGuard Coating for Improved Reliability
Chip Scale Package (CSP) Features Extremely Low Lead
Inductance for Optimum Filter and ESD Performance
15 kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
30 kV ESD Protection on Each Channel (HBM)
Better than 40 dB of Attenuation at 1 GHz
Maintains Signal Integrity for Signals that Have a
Risetime and Falltime as Fast as 2 ns
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
•
15−Bump, 3.006 mm x 1.376 mm Footprint Chip Scale
Package (CM1451−06CP)
•
20−Bump, 4.006 mm x 1.376 mm Footprint Chip Scale
Package (CM1451−08CP)
•
These Devices are Pb−Free and are RoHS Compliant
Applications
•
LCD and Camera Data Lines in Mobile Handsets
•
I/O Port Protection for Mobile Handsets, Notebook
Computers, PDAs, etc.
•
Wireless Handsets / Cell Phones
•
EMI Filtering for Data Ports in Cell Phones, PDAs or
Notebook Computers
•
Handheld PCs / PDAs
•
LCD and Camera Modules
1
©
Semiconductor Components Industries, LLC, 2013
April, 2013
−
Rev. 3
Publication Order Number:
CM1451/D
CM1451
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Current per Inductor
DC Package Power Rating
Rating
−65
to +150
30
500
Units
°C
mA
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
−40
to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
L
TOT
L
1
, L
2
R
DC IN−OUT
C
TOT
C
1
, C
2
, C
3
f
C
f
RO
V
DIODE
I
LEAK
V
SIG
Parameter
Total Channel Inductance (L
1
+ L
2
)
Inductance
DC Channel Resistance
Total Channel Capacitance (C
1
+ C
2
+ C
3
)
Capacitance
Cut−off Frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
Roll−off Frequency at
−10
dB Attenuation
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
Diode Standoff Voltage
Diode Leakage Current
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883, Method 3015
b) Contact Discharge per IEC 61000−4−2 Level 4
Dynamic Resistance
Positive
Negative
I
DIODE
= 10
mA
V
DIODE
= +3.3 V
I
LOAD
= 10 mA
5.6
−1.5
30
15
2.30
0.90
At 2.5 V DC, 1 MHz,
30 mV AC
At 2.5 V DC, 1 MHz,
30 mV AC
22.8
7.6
Conditions
Min
Typ
34
17
18
28.5
9.5
34.2
11.4
Max
Units
nH
nH
W
pF
pF
MHz
MHz
V
1.0
9.0
−0.4
mA
V
260
500
6.0
0.1
6.8
−0.8
V
ESD
(Note 2)
kV
R
DYN
W
1. T
A
= 25
°
C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
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