2.5V / 3.3V 10-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH
®
PRODUCTS
2.5V / 3.3V 10-BIT HIGH
BANDWIDTH BUS SWITCH
WITH PRECHARGED OUTPUTS
FEATURES:
• N channel FET switches with no parasitic diode to V
CC
– Isolation under power-off conditions
– No DC path to V
CC
or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• B port precharged to user-selectable V
BIAS
• Low R
ON
- 4Ω typical
Ω
• Flat R
ON
characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent R
ON
matching between channels
• V
CC
operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in QSOP and TSSOP packages
IDTQS3VH800
DESCRIPTION:
The QS3VH800 HotSwitch is a high bandwidth, 10-bit bus switch. The
QS3VH800 has very low ON resistance, resulting in under 250ps propaga-
tion delay through the switch. The QS3VH800 precharges the B port to a
user selectable bias voltage (V
BIAS
) to minimize live insertion noise. The
switches can be turned ON under the control of the LVTTL-compatible
Output Enable (OE) signal for bidirectional data flow with no added delay
or ground bounce. In the ON state, the switches can pass signals up to 5V.
In the OFF state, the switches offer very high impedence at the terminals.
The combination of near-zero propagation delay, high OFF impedance,
and over-voltage tolerance makes the QS3VH800 ideal for high perfor-
mance communication applications.
The QS3VH800 is characterized for operation from -40°C to +85°C.
APPLICATIONS:
•
•
•
•
•
Hot-swapping
10/100 Base-T, Ethernet LAN switch
Low distortion analog switch
Replaces mechanical relay
ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
V
BIAS
A
0
B
0
A
9
B
9
OE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
c
2008 Integrated Device Technology, Inc.
SEPTEMBER 2008
DSC-5880/16
IDTQS3VH800
2.5V / 3.3V 10-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Max
–0.5 to +4.6
–0.5 to +5.5
–0.5 to +5.5
–3
120
–65 to +150
Unit
V
V
V
V
mA
°C
V
TERM
(2)
SupplyVoltage to Ground
V
TERM
(3)
DC Switch Voltage V
S
OE
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
B
0
B
1
B
2
B
3
B
4
B
5
B
6
B
7
B
8
B
9
V
BIAS
V
TERM
(3)
DC Input Voltage V
IN
V
AC
I
OUT
T
STG
AC Input Voltage (pulse width
≤20ns)
DC Output Current (max. sink current/pin)
Storage Temperature
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
CC
terminals.
3. All terminals except V
CC
.
CAPACITANCE
0V)
Symbol
C
IN
C
I/O
C
I/O
Parameter
Control Inputs
(1)
(T
A
= +25°C, F = 1MHz, V
IN
= 0V, V
OUT
=
Typ.
3
4
8
V
BIAS
= OPEN
Max.
5
6
12
Unit
pF
pF
pF
Quickswitch Channels (Switch OFF)
Quickswitch Channels (Switch ON)
QSOP/ TSSOP
TOP VIEW
NOTE:
1. This parameter is guaranteed but not production tested.
PIN DESCRIPTION
Pin Names
OE
V
BIAS
A
0
- A
9
B
0
- B
9
I/O
I
I
I/O
I/O
Description
Bus Switch Enable
Bias Voltage
Bus A
Bus B
FUNCTION TABLE
(1)
OE
L
H
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
Z = High-Impedence
B
0
- B
9
A
0
- A
9
V
BIAS
Function
Connect
Disconnect A
0
- A
9
= Z
2
IDTQS3VH800
2.5V / 3.3V 10-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 3.3V ±0.3V
Symbol
V
IH
V
IL
V
BIAS
I
O
I
IN
I
OZ
I
OFF
R
ON
Parameter
Input HIGH Voltage
Input LOW Voltage
Bias Voltage
Bias Current
(2)
Input Leakage Current (Control Inputs)
Off-State Current (Hi-Z)
Data Input/Output Power Off Leakage
Switch ON Resistance
for Control Inputs
Guaranteed Logic LOW
for Control Inputs
V
CC
= 3V to 3.6V, I
O
= 0
V
CC
= 2.3V to 2.7V, I
O
= 0
V
CC
= 3V, V
BIAS
= 2.4V, V
O
= 0,
OE
= HIGH
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
5V, Switches OFF
V
IN
or V
OUT
0V to 5V, V
CC
= 0V
V
CC
= 2.3V
Typical at V
CC
= 2.5V
V
CC
= 3V
NOTES:
1. Typical values are at V
CC
= 3.3V and T
A
= 25°C.
2. Bias resistance is 5kΩ typical at V
CC
= 3.3V; V
BIAS
= 2.4V, 25°C.
Test Conditions
Guaranteed Logic HIGH
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
Min.
1.7
2
—
—
0
0
0.25
—
—
—
I
ON
= 30mA
I
ON
= 15mA
I
ON
= 30mA
I
ON
= 15mA
—
—
—
—
Typ.
(1)
—
—
—
—
—
—
—
—
—
—
6
7
4
5
Max.
—
—
0.7
0.8
5
3.3
—
±1
±1
±1
8
9
6
8
Unit
V
V
V
mA
µA
µA
µA
Ω
V
IN
= 0V
V
IN
= 1.7V
V
IN
= 0V
V
IN
= 2.4V
TYPICAL ON RESISTANCE vs V
IN
AT V
CC
= 3.3V
16
14
R
ON
(ohms)
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
IN
(Volts)
3
IDTQS3VH800
2.5V / 3.3V 10-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
I
CCQ
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
Power Supply Current
(2,3)
per Input HIGH
Dynamic Power Supply Current
(4)
Test Conditions
(1)
V
CC
= Max., V
IN
= GND or V
CC
, f = 0
V
CC
= Max., V
IN
= 3V, f = 0 per Control Input
V
CC
= 3.3V, A and B Pins Open, Control Inputs
Toggling @ 50% Duty Cycle
NOTES:
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.
2. Per input driven at the specified level. A and B pins do not contribute to
∆Icc.
3. This parameter is guaranteed but not tested.
4. This parameter represents the current required to switch internal capacitance at the specified frequency. The A and B inputs do not contribute to the Dynamic Power Supply Current. This
parameter is guaranteed but not production tested.
Min.
—
—
Typ.
2
—
Max.
4
30
Unit
mA
µA
See Typical I
CCD
vs Enable Frequency graph below
TYPICAL I
CCD
vs ENABLE FREQUENCY CURVE AT V
CC
= 3.3V
12
10
8
I
CCD
(mA)
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
ENABLE FREQUENCY (MHz)
4
IDTQS3VH800
2.5V / 3.3V 10-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
T
A
= -40°C to +85°C
V
CC
= 2.5 ± 0.2V
(1)
Symbol
t
PLH
t
PHL
t
PZL
t
PZH
t
PLZ
t
PHZ
f
OE
Parameter
Data Propagation Delay
(2,3)
Ax to Bx or Bx to Ax
Switch Turn-On Delay
OE
to Ax to Bx
Switch Turn-Off Delay
OE
to Ax to Bx
Operating Frequency - Enable
(2,5)
Test Conditions
Min
.
(4)
V
CC
= 3.3 ± 0.3V
(1)
Min
.
(4)
⎯
1.5
1.5
Max.
0.2
7.5
7
20
Unit
ns
ns
ns
MHz
Max.
0.2
8
7
10
⎯
1.5
1.5
V
BIAS
= 3V
V
BIAS
= GND
V
BIAS
= 3V
V
BIAS
= GND
V
BIAS
= OPEN
⎯
⎯
NOTES:
1. See Test Conditions under TEST CIRCUITS AND WAVEFORMS.
2. This parameter is guaranteed but not production tested.
3. The bus switch contributes no propagation delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone is of the
order of 0.2ns at C
L
= 50pF. Since this time constant is much smaller than the rise and fall times of typical driving signals, it adds very little propagation delay to the system. Propagation
delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interaction with the load on the driven side.
4. Minimums are guaranteed but not production tested.
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