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SM0218LC1CDQ

产品描述2000 MHz - 18000 MHz RF/MICROWAVE I/Q MODULATOR, 12 dB CONVERSION LOSS-MAX, HERMETIC SEALD PACKAGE
产品类别无线/射频/通信    射频和微波   
文件大小189KB,共2页
制造商MITEQ Inc
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SM0218LC1CDQ概述

2000 MHz - 18000 MHz RF/MICROWAVE I/Q MODULATOR, 12 dB CONVERSION LOSS-MAX, HERMETIC SEALD PACKAGE

SM0218LC1CDQ规格参数

参数名称属性值
厂商名称MITEQ Inc
Reach Compliance Codeunknown
其他特性SMA-F
特性阻抗50 Ω
构造COAXIAL
最大变频损耗12 dB
最大输入功率 (CW)16 dBm
调制技术I/Q
最大工作频率18000 MHz
最小工作频率2000 MHz
最高工作温度85 °C
最低工作温度-54 °C
射频/微波设备类型MODULATOR
端子面层NICKEL
最大电压驻波比2.5

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2 TO 18 GHz SINGLE-SIDEBAND UPCONVERTER OR I/Q MODULATOR
MODEL: SM0218LC1CD__ (Carrier Driven)
*
MODULATOR PRODUCTS
FEATURES
• RF output/carrier input .......... 2 to 18 GHz
• Linear modulation input ........ Up to +5 dBm
• Carrier input power ................ +10 to +16 dBm
• Sideband suppression ........... 20 dB
• Carrier rejection...................... 25 dB
• IF options:
Single sideband ...................... A, B and C
(internal hybrid)
I/Q modulator .......................... Q (separate inputs)
All modulators and SSB upconverters require that at least one of the input frequency bands (carrier or modulation)
has sufficient power to turn on the semiconductors. This model employs carrier drive. All modulators yield a frequen-
cy spectrum that utilizes both sidebands on either side of the output suppressed carrier. SSB upconverters, howev-
er, employ an internal IF 90° hybrid to yield only one RF sideband output. This is offset above or below the input LO
by the IF frequency (test data is recorded for the upper sideband only). Schottky diode (standard) modulators have
the greatest speed and bandwidths, but yield RF output powers of typically less than 0 dBm. Greater output power
can be achieved by using higher level diodes with proportional increases in carrier power. This carrier driven unit is
used when the modulation input to RF output must be linear (low harmonics). A typical application is for digital QPSK
with cosine shaped pulses (for minimum bandwidth). Many SSB upconverters also require input-to-output signal lin-
earity, thus requiring LO drive.
ELECTRICAL SPECIFICATIONS
INPUT PARAMETERS
RF carrier
RF VSWR (RF = +13 dBm, IF modulation = 0 dBm)
RF power (low-level diodes)
IF modulation frequency range (Note 3)
IF modulation power range (total I/Q)
TRANSFER CHARACTERISTICS
Conversion loss (Note 1)
Carrier suppression (RF = +13 dBm, IF modulation = +5 dBm)
Sideband suppression (Note 2)
Carrier – fundamental IF
Carrier ±2 IF, 4 IF, etc.
Carrier ±3 IF
Quadrature phase accuracy, I/Q mode (see Graph Key)
Quadrature amplitude accuracy
OUTPUT PARAMETERS
RF frequency range
RF VSWR (RF = +13 dBm, IF modulation = 0 dBm)
dBc
dBc
dBc
Degrees
dB
UNITS
GHz
Ratio
MIN.
2
2.5:1
15
18
45
40
±10
±1
TYP.
MAX.
18
UNITS
GHz
Ratio
dBm
MHz
dBm
UNITS
dB
dBc
+10
DC
Noise
MIN.
TYP.
8
12
MIN.
2
2:1
+13
+16
500
+7
MAX.
12
TYP.
MAX.
18
100 Davids Drive, Hauppauge, NY 11788 • TEL: (631) 439-9220 • FAX: (631) 436-7430 •
www.miteq.com
C-34B/347

 
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