FMM5807X
21-27GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 30dBm (Typ.)
High Gain: G1dB = 14dB (Typ.)
High PAE:
η
add = 20% (Typ.)
Wide Frequency Band: 21-27 GHz
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5807X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 21-27GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems. This device is well suited
for millimeter wave radio applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Condition
Rating
10
-3.0
25
-65 to +175
-40 to +85
Unit
V
V
dBm
°C
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
Output Return Loss
Symbol
f
P
1dB
G
1dB
Iddrf
η
add
RLin
RLout
VDD = 6V
f = 21 ~ 27 GHz
*: at f = 21-24 GHz
**: at f = 24-27 GHz
IDD
=
650mA (Typ.)
ZS = ZL = 50Ω
27*
28**
10
-
-
-
-
Conditions
Limits
Min. Typ. Max.
21 - 27
29*
30**
14
700
20
-12
-8
-
-
19
950
-
-
-
Unit
GHz
dBm
dB
mA
%
dB
dB
Note:
RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.2
January 2001
1
FMM5807X
21-27GHz Power Amplifier MMIC
CHIP OUTLINE
VGG1
0
VDD1
235
2200
2110
2020
VDD2
1290
VDD4
2950
3450
620
2225
Unit:
µm
2200
2015
1330
RFin
RFout
1275
180
185
90
0
0
0 105 265
620
1290
VDD3
2225
2950
VDD5
3350
3450
VGG2
Chip Size: 3450±30µm x 2200±30µm
Chip Thickness: 70µm
DC Pad Dimensions: VGG: 80 x 80µm
VDD: 100 x 100µm
RF Pad Dimensions: 120µm x 80µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0500M200
4
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