FMC1819P1-01
Ku, K-Band Power GaAs Modules
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 21dBm(Typ.)
High Gain: G1dB = 13.5dB(Typ.)
Low In/Out VSWR
Broad Band: 18.7 ~ 19.7GHz
Impedance Matched Zin/Zout = 50W
Hermetically Sealed Package (12 X 15 X 3.5mm)
DESCRIPTION
The FMC1819P1-01 is a module that contains a two-stage amplifier,
internally matched, for standard communications in the 18.7 to 19.7GHz
frequency range. This product is well suited for point-to-point radio
applications as it offers high power, high gain, and low VSWR.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25¡C)
Parameter
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Rating
10
-7
11.5
-55 to +125
-55 to +85
Unit
V
V
dBm
¡C
¡C
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 8 volts.
2. The gate operating voltage (VGG) should not exceed -5 volts.
1998 Microwave Databook
564
Data Sheets
FMC1819P1-01
Ku, K-Band Power GaAs Modules
OUTPUT POWER vs. FREQUENCY
VDD=8V
VGG=-5V
OUTPUT POWER vs. INPUT POWER
VDD=8V
VGG=-5V
f = 19.2 GHz
22
Output Power (dBm)
20
18
16
14
12
10
Pin=10dBm
P1dB
4dBm
22
Output Power (dBm)
20
18
16
14
12
10
2.
0dBm
-4dBm
18.7
19.2
19.7
-4
-2
0
2
4
6
8
Frequency (GHz)
Input Power (dBm)
Case Style "GJ"
Metal-Ceramic Hermetic Package
4-R 1.2±0.15
(0.047)
3.5 Max.
(0.137)
1.3±0.15
(0.051)
0.3
(0.012)
3
11±0.15
(0.433)
7
(0.276)
15
(0.591)
3.8
(0.149)
2
1
4
5
6
6-0.08
(0.003)
0.9
(0.035)
1. V
DD
2. RFin
3. V
GG
4. V
GG
5. RF
out
6. V
DD
7. GND (Body)
Unit: mm (inches)
7
INDEX
1 Min.
(0.039)
6±0.15
(0.236)
12±0.15
(0.472)
Data Sheets
565
1998 Microwave Databook
DSP 与 ARM 处理器
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