Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Central Semiconductor |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 0.6 A |
| 基于收集器的最大容量 | 8 pF |
| 集电极-发射极最大电压 | 40 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PSSO-F3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 1.2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | MATTE TIN (315) |
| 端子形式 | FLAT |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 300 MHz |
| 最大关闭时间（toff） | 285 ns |
| 最大开启时间（吨） | 35 ns |
| VCEsat-Max | 1 V |
| CXT2222ATRLEADFREE | CXT2222ATR13 | CXT2222ATR13LEADFREE | CXT2222ATR | CXT2222ABKLEADFREE | CXT2222ABK | |
|---|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, |
| 是否无铅 | 不含铅 | 含铅 | 不含铅 | 含铅 | 不含铅 | 含铅 |
| 是否Rohs认证 | 符合 | 不符合 | 符合 | 不符合 | 符合 | 不符合 |
| Reach Compliance Code | compliant | not_compliant | compliant | unknown | compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
| 基于收集器的最大容量 | 8 pF | 8 pF | 8 pF | 8 pF | 8 pF | 8 pF |
| 集电极-发射极最大电压 | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 | 100 | 100 |
| JESD-30 代码 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| JESD-609代码 | e3 | e0 | e3 | e0 | e3 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | MATTE TIN (315) | Tin/Lead (Sn/Pb) | MATTE TIN (315) | Tin/Lead (Sn/Pb) | MATTE TIN (315) | Tin/Lead (Sn/Pb) |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 300 MHz | 300 MHz | 300 MHz | 300 MHz | 300 MHz | 300 MHz |
| 最大关闭时间（toff） | 285 ns | 285 ns | 285 ns | 285 ns | 285 ns | 285 ns |
| 最大开启时间（吨） | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns |
| VCEsat-Max | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
| 厂商名称 | Central Semiconductor | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
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