Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Central Semiconductor |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 1 A |
| 基于收集器的最大容量 | 20 pF |
| 集电极-发射极最大电压 | 80 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PDSO-G4 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 100 MHz |
| VCEsat-Max | 0.5 V |
| CZT4033TR13 | CZT4033TR13LEADFREE | CZT4033TRLEADFREE | CZT4033TR | CZT4033BK | CZT4033BKLEADFREE | |
|---|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, |
| 是否无铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 含铅 | 不含铅 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 不符合 | 不符合 | 符合 |
| 厂商名称 | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | unknown | compliant | compliant | unknown | unknown | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| 基于收集器的最大容量 | 20 pF | 20 pF | 20 pF | 20 pF | 20 pF | 20 pF |
| 集电极-发射极最大电压 | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 | 100 | 100 |
| JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609代码 | e0 | e3 | e3 | e0 | e0 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 | 4 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 2 W | 2 W | 2 W | 2 W | 2 W | 2 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 10 | 10 | NOT SPECIFIED | NOT SPECIFIED | 10 |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V |
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