AP4439FM
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
SO-8
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
S
S
G
-30V
10mΩ
-13.3A
D
I
D
Description
AP4439F series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 10V
Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
.
Rating
-30
+25
-13.3
-10.6
-50
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
Data and specifications subject to change without notice
1
201510011AP
AP4439FM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-12A
V
GS
=-4.5V, I
D
=-8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-12A
V
DS
=-24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-12A
V
DS
=-15V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
42
-
-
31
6.5
14.5
9
7
100
63
420
375
Max. Units
-
10
17
-3
-
-30
+100
70
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
2770 5080
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-2A, V
GS
=0V
I
S
=-12A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
31
23
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4439FM
50
40
T
A
= 25 C
40
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V
G
= - 4.0 V
T
A
= 150 C
30
o
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V
G
= - 4.0 V
30
20
20
10
10
0
0
0
1
1
2
2
0
0
0
1
1
2
2
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I
D
= -8 A
T
A
=25
℃
Normalized R
DS(ON)
12
I
D
= -12 A
V
G
=-10V
1.6
R
DS(ON)
(m
Ω
)
10
.
1.2
8
0.8
6
0.4
2
4
6
8
10
-100
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I
D
= - 250uA
1.6
10
Normalized V
GS(th)
1.4
-I
S
(A)
1.2
T
j
=150 C
1
o
T
j
=25 C
o
0.8
0.4
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
-100
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4439FM
8
5000
f=1.0MHz
I
D
= -12A
V
DS
= -15V
-V
GS
, Gate to Source Voltage (V)
4000
6
C (pF)
3000
C
iss
2000
4
2
1000
C
oss
C
rss
0
0
10
20
30
40
50
0
1
5
9
13
17
21
25
29
33
37
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
100us
1ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
-I
D
(A)
10ms
1
0.05
100ms
1s
0.1
.
0.02
0.01
P
DM
0.01
t
T
Single Pulse
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
60
V
DS
= -5V
50
T
j
=25
o
C
T
j
=150 C
o
-I
D
, Drain Current (A)
12
-I
D
, Drain Current (A)
40
8
30
20
4
10
0
25
50
75
100
125
150
0
0
1
2
3
4
5
T
A
, Ambient Temperature (
o
C )
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Drain Current v.s. Ambient
Temperature
Fig 12. Transfer Characteristics
4
AP4439FM
2
4
I
D
= -1mA
1.6
P
D
, Power Dissipation(W)
-50
0
50
100
150
3
Normalized BV
DSS
1.2
2
0.8
1
0.4
0
-100
0
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
A
, Ambient Temperature(
o
C)
Fig 13. Normalized BV
DSS
v.s. Junction
Temperature
40
Fig 14. Total Power Dissipation
T
j
=25
o
C
30
R
DS(ON)
(m
Ω
)
20
.
-4.5V
V
GS
= -10V
10
0
0
4
8
12
16
20
24
-I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
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