PD - 91479B
IRF6215
HEXFET
®
Power MOSFET
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
l
D
V
DSS
= -150V
G
S
R
DS(on)
= 0.29Ω
I
D
= -13A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
°C/W
5/13/98
IRF6215
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
36
53
37
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.29
V
GS
= -10V, I
D
= -6.6A
,
T
J
= 25°C
Ω
0.58
V
GS
= -10V, I
D
= -6.6A
,
T
J
= 150°C
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -50V, I
D
= -6.6A
-25
V
DS
= -150V, V
GS
= 0V
µA
-250
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
66
I
D
= -6.6A
8.1
nC
V
DS
= -120V
35
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -75V
–––
I
D
= -6.6A
ns
–––
R
G
= 6.8Ω
–––
R
D
= 12Ω, See Fig. 10
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
860 –––
V
GS
= 0V
220 –––
pF
V
DS
= -25V
130 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -13
showing the
A
G
integral reverse
––– ––– -44
p-n junction diode.
S
––– ––– -1.6
V
T
J
= 25°C, I
S
= -6.6A, V
GS
= 0V
––– 160 240
ns
T
J
= 25°C, I
F
= -6.6A
––– 1.2 1.7
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-6.6A, di/dt
≤
-620A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Starting T
J
= 25°C, L = 14mH
R
G
= 25Ω, I
AS
= -6.6A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
IRF6215
100
TOP
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
-ID , D rain-to-S ource C urrent (A )
10
-ID , D rain-to-S ource C urrent (A )
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
-4 .5V
2 0µ s P U LS E W ID T H
T
C
= 1 75 °C
J
1
10
-4 .5 V
1
1
10
20 µ s P U L S E W ID TH
T
J
= 25 °C
c
A
100
1
A
100
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics,
Fig 2.
Typical Output Characteristics,
100
2.5
R
D S (on)
, Drain-to-S ource O n Resistance
(N orm alized)
I
D
= -11 A
-I
D
, D rain-to-S ource C urrent (A)
2.0
T
J
= 2 5 °C
T
J
= 1 7 5 °C
10
1.5
1.0
0.5
1
4
5
6
7
V
D S
= -5 0 V
2 0 µ s P U L S E W ID T H
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= -1 0V
100 120 140 160 180
A
-V
G S
, G a te -to -S o u rc e V o lta g e (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF6215
2000
1600
-V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
20
I
D
= -6 .6 A
16
V
D S
= -12 0V
V
D S
= -75 V
V
D S
= -30 V
C , Capacitance (pF)
C
iss
1200
12
C
oss
800
8
C
rss
400
4
0
1
10
100
A
0
0
20
40
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
60
80
A
-V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse D rain Current (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R
D S (o n)
10µ s
10
T
J
= 17 5 °C
T
J
= 25 °C
-I
D
, D rain C urrent (A)
10
100µ s
1
1m s
0.1
0.2
0.6
1.0
1.4
V
G S
= 0V
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
100
10m s
A
1000
1.8
-V
S D
, S ourc e-to-D rain V oltage (V )
-V
D S
, D rain-to-S ourc e V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF6215
15
V
DS
12
R
D
V
GS
R
G
D.U.T.
+
-I
D
, Drain Current (A)
9
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
6
Fig 10a.
Switching Time Test Circuit
3
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
75
100
125
150
175
10%
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
P
DM
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
V
DD
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