AP4409AGEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant
SO-8
S
S
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
S
-35V
7.5mΩ
-14.5A
I
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
G
S
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
.
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
3a
Drain Current , V
GS
@ 10V
Rating
-35
+20
-14.5
-12
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
3a
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3a
Value
50
Unit
℃/W
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Data and specifications subject to change without notice
1
201412312AP
AP4409AGEM-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-7A
V
GS
=-4V, I
D
=-7A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-14A
V
DS
=-30V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-35
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7
-
-
-
58
7
37
15
13
76
60
Max. Units
-
7.5
15
-3
-
-10
-25
+30
90
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
.
4100 6600
640
530
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=-14A, V
GS
=0V
I
S
=-14A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
46
44
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
（a）,
t <10sec
(a) 1 in
2
pad of
2 oz copper
(b) 125℃/W when
mounted on a 0.003
in
2
pad of 2 oz copper
2
AP4409AGEM-HF
50
50
T
A
= 25 C
40
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
- 10V
-7.0 V
-5.0 V
-4.5 V
V
G
= - 3.0 V
T
A
= 150 C
40
o
-10V
- 7.0 V
- 5.0 V
- 4.5 V
V
G
= - 3.0 V
30
30
20
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
18
1.8
I
D
=-7A
T
A
=25
℃
16
I
D
=-7A
V
G
=-10V
Normalized R
DS(ON)
14
1.4
R
DS(ON\)
(m
Ω
)
12
.
10
1.0
8
6
0.6
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
10
8
1.4
T
j
=150
o
C
-I
S
(A)
6
T
j
=25
o
C
Normalized V
GS(th)
1.2
1.0
4
0.6
2
0
0
0.2
0.4
0.6
0.8
1
0.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4409AGEM-HF
16
10000
f=1.0MHz
I
D
= -14A
V
DS
= - 30 V
-V
GS
, Gate to Source Voltage (V)
C
iss
12
8
C (pF)
1000
C
oss
C
rss
4
0
0
30
60
90
120
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
1ms
0.2
0.1
0.1
-I
D
(A)
10ms
1
0.05
100ms
1s
0.1
.
0.02
P
DM
0.01
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=125
o
C/W
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
Single Pulse
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4409AGEM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
4409AGEM
YWWSSS
.
5
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