Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
Objectid | 1937372156 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 1 A |
集电极-发射极最大电压 | 40 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 30 |
JEDEC-95代码 | TO-39 |
JESD-30 代码 | O-MBCY-W3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 175 °C |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | NPN |
最大功率耗散 (Abs) | 0.8 W |
认证状态 | Qualified |
参考标准 | MIL-19500/581 |
表面贴装 | NO |
端子面层 | TIN LEAD |
端子形式 | WIRE |
端子位置 | BOTTOM |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 1 MHz |
JANTXV2N4237 | JANTX2N4238 | JANTXV2N4238 | JANTXV2N4239 | JANTX2N4239 | JANTX2N4237 | |
---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | compli | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
集电极-发射极最大电压 | 40 V | 60 V | 60 V | 80 V | 80 V | 40 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 30 | 30 | 30 | 30 | 30 | 30 |
JEDEC-95代码 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
最大功率耗散 (Abs) | 0.8 W | 0.8 W | 0.8 W | 0.8 W | 0.8 W | 0.8 W |
认证状态 | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
参考标准 | MIL-19500/581 | MIL-19500/581 | MIL-19500/581 | MIL-19500/581 | MIL-19500/581 | MIL-19500/581 |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz |
Objectid | 1937372156 | - | 1937372157 | 1937372158 | 1937372151 | 1937372149 |
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