ADE-208-351(Z)
HZM6.8WA
Silicon Epitaxial Planar Zener Diode
for Surge Absorb
Rev. 0
May.1995
Features
• HZM6.8WA has two devices, and can absorb
external
+
and
−surge.
• MPAK Package is suitable for high density
surface mounting and high speed assembly.
2
Outline
3
1
(Top View)
1 Cathode
2 Cathode
3 Anode
Ordering Information
Type No.
HZM6.8WA
Laser Mark
68A
Package Code
MPAK
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
* Two device total, See Fig. 2.
Symbol
p *
d
Value
200
150
-55 to +150
Unit
mW
°C
°C
T
j
Tstg
Electrical Characteristics
(Ta = 25°C)
tem
Zener voltage
Reverse current
Capacitance
Dynamic resistance
ESD-Capability
Symbol Min
V
Z
I
R
C
rd
—
6.47
—
—
—
30
Typ
—
—
—
—
—
Max
7.0
2
130
30
—
Unit
V
µA
pF
Ω
KV
Test Condition
I
Z
= 5 mA, 40ms pulse
V
R
= 3.5V
V
R
= 0 V , f = 1 MHz
I
Z
= 5 mA
*C=150pF, R=330Ω
Both forward and reverse
direction 10 pulse
* Failure criterion ; I
R
≥
2µA at V
R
= 3.5V.
HZM6.8WA
10
250
1.0mm
(mA)
8
Power Dissipation P
d
(mW)
200
Cu Foil
Zener Current I
6
150
Printed circuit board
25
×
62
×
1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
Z
4
100
2
50
0
0
1
2
3
4
5
6
7
8
Zener Voltage V
Z
(V)
Fig.1 Zener current Vs.
Zener voltage
0
0
100
150
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation Vs.
Ambient Temperature
50
200
Nonrepetitive Surge Reverses Power P
RSM
(W)
10
4
P
RSM
t
10
3
Ta = 25°C
nonrepetitive
10
2
10
1.0
10
-5
10
-4
10
Time t
-3
10
(s)
-2
10
-1
1.0
Fig.3 Surge Reverse Power Ratings
0.8mm
HZM6.8WA
10
Transient Thermal Impedance Z th (°C/W)
4
10
3
10
2
10
1.0
10
-2
10
-1
1.0
Time t
10
(s)
10
2
10
3
Fig.4 Transient Thermal Impedance
Package Dimensions
0.65
– 0.3
+ 0.1
Unit: mm
Laser Mark
0.4
– 0.05
+ 0.10
0.16
– 0.06
+ 0.10
3
0.1
0.65
+ 0.3
–
2
0.95
1
0.95
2.8
68A
1.9
0.3
2.8
+ 0.1
–
+ 0.2
– 0.6
1.5
0 – 0.10
1 Cathode
2 Cathode
3 Anode
0.3
HITACHI Code MPAK(1)
1.1
– 0.1
+ 0.2
JEDEC Code
EIAJ Code
Weight (g)
—
SC-59A
0.011
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