Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CQCC20, LCC-20
| 参数名称 | 属性值 |
| 厂商名称 | Rochester Electronics |
| 包装说明 | QCCN, |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 最大平均偏置电流 (IIB) | 6 µA |
| 标称共模抑制比 | 80 dB |
| 最大输入失调电压 | 10000 µV |
| JESD-30 代码 | S-CQCC-N20 |
| 长度 | 8.89 mm |
| 负供电电压上限 | -18 V |
| 标称负供电电压 (Vsup) | -15 V |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 1.905 mm |
| 标称压摆率 | 300 V/us |
| 供电电压上限 | 18 V |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | YES |
| 技术 | BIPOLAR |
| 温度等级 | MILITARY |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 标称均一增益带宽 | 50000 kHz |
| 宽度 | 8.89 mm |
| LM6161E/883 | LM6161W/883 | LM6161WG/883 | LM6161J/883 | |
|---|---|---|---|---|
| 描述 | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CQCC20, LCC-20 | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDFP10, CERAMIC, DFP-10 | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDSO10, CERAMIC, SOIC-10 | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDIP8, CERAMIC, DIP-8 |
| 厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
| 包装说明 | QCCN, | CERAMIC, DFP-10 | CERAMIC, SOIC-10 | DIP, |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| 最大平均偏置电流 (IIB) | 6 µA | 6 µA | 6 µA | 6 µA |
| 标称共模抑制比 | 80 dB | 80 dB | 80 dB | 80 dB |
| 最大输入失调电压 | 10000 µV | 10000 µV | 10000 µV | 10000 µV |
| JESD-30 代码 | S-CQCC-N20 | R-GDFP-F10 | R-GDSO-G10 | R-GDIP-T8 |
| 负供电电压上限 | -18 V | -18 V | -18 V | -18 V |
| 标称负供电电压 (Vsup) | -15 V | -15 V | -15 V | -15 V |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 10 | 10 | 8 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | QCCN | DFP | SOP | DIP |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | FLATPACK | SMALL OUTLINE | IN-LINE |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 1.905 mm | 2.032 mm | 2.33 mm | 5.08 mm |
| 标称压摆率 | 300 V/us | 300 V/us | 300 V/us | 300 V/us |
| 供电电压上限 | 18 V | 18 V | 18 V | 18 V |
| 标称供电电压 (Vsup) | 15 V | 15 V | 15 V | 15 V |
| 表面贴装 | YES | YES | YES | NO |
| 技术 | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | NO LEAD | FLAT | GULL WING | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| 端子位置 | QUAD | DUAL | DUAL | DUAL |
| 标称均一增益带宽 | 50000 kHz | 50000 kHz | 50000 kHz | 50000 kHz |
| 宽度 | 8.89 mm | 6.3246 mm | 6.12 mm | 7.62 mm |
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