SUD50N03-09P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
63
b
52
b
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
Optimized for High- or Low-Side
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
S
Ordering Information: SUD50N03-09P
SUD50N03-09P—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
a
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
"20
63
b
44.5
b
50
10
35
61
65.2
7.5
a
−55
to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
16
40
1.8
Maximum
20
50
2.3
Unit
_C/W
C/W
1
SUD50N03-09P
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
20
0.0115
50
0.0076
0.0095
0.015
0.014
S
W
30
1.0
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Charge
c
Charge
c
Gate-Source
Gate-Drain
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2200
410
180
11
7.5
5.0
1.5
9
80
22
8
2.1
15
120
35
12
ns
W
16
nC
p
pF
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120
V
GS
= 10 thru 6 V
5V
90
I D
−
Drain Current (A)
I D
−
Drain Current (A)
90
120
Transfer Characteristics
60
4V
60
T
C
= 125_C
30
25_C
0
−55_C
3
4
5
6
30
3V
0
0
2
4
6
2V
8
10
0
1
2
V
DS
−
Drain-to-Source Voltage (V)
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V
GS
−
Gate-to-Source Voltage (V)
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
2
SUD50N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
100
0.05
On-Resistance vs. Drain Current
g fs
−
Transconductance (S)
T
C
=
−55_C
25_C
125_C
60
r DS(on)
−
On-Resistance (
W
)
80
0.04
0.03
40
0.02
V
GS
= 4.5 V
V
GS
= 10 V
20
0.01
0
0
10
20
30
40
50
0.00
0
20
40
60
80
100
I
D
−
Drain Current (A)
3000
2500
C
−
Capacitance (pF)
2000
1500
1000
C
oss
500
0
0
5
10
15
20
25
30
V
DS
−
Drain-to-Source Voltage (V)
C
rss
I
D
−
Drain Current (A)
10
V
DS
= 15 V
I
D
= 30 A
Capacitance
C
iss
V GS
−
Gate-to-Source Voltage (V)
Gate Charge
8
6
4
2
0
0
6
12
18
24
30
Q
g
−
Total Gate Charge (nC)
2.0
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 30 A
I S
−
Source Current (A)
Source-Drain Diode Forward Voltage
1.6
r
DS(on)
−
On-Resiistance
(Normalized)
1.2
T
J
= 150_C
10
T
J
= 25_C
0.8
0.4
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
3
SUD50N03-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
25
1000
Safe Operating Area
Limited
by r
DS(on)
20
I D
−
Drain Current (A)
I D
−
Drain Current (A)
100
10, 100
ms
15
10
1 ms
10 ms
100 ms
1s
10 s
T
A
= 25_C
Single Pulse
100 s
dc
10
1
5
0.1
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
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Document Number: 71856
S-40573—Rev. E, 29-Mar-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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