SUP/SUB75N04-05L
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(W)
0.0055 @ V
GS
= 10 V
0.0065 @ V
GS
= 4.5 V
I
D
(A)
75
a
75
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N04-05L
D S
S
N-Channel MOSFET
Top View
SUB75N04-05L
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
75
a
55
240
75
280
250
c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70774
S-05110—Rev. F, 10-Dec-01
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
C/W
2-1
SUP/SUB75N04-05L
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V
,
V
GS
= 0 V, T
J
= 125_C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 75 A
Drain-Source On-State Resistance
a
V
GS
= 4.5 V, I
D
= 75 A
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.0044
0.0054
0.0055
0.0065
0.0091
0.011
S
W
40
V
1.0
3.0
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.47
W
I
D
^
75 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V
,
V
GS
= 10 V, I
D
= 75 A
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
6400
1700
700
130
20
30
15
60
130
70
30
120
260
140
ns
200
nC
pF
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 75 A, di/dt = 100 A/ms
m
I
F
= 75 A , V
GS
= 0 V
1.0
65
4
0.13
75
A
240
1.3
120
8
26
V
ns
A
mC
Notes
a. Pulse test: pulse width
v
300
msec,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2-2
Document Number: 70774
S-05110—Rev. F, 10-Dec-01
SUP/SUB75N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 through 5 V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
200
4V
150
200
250
Transfer Characteristics
150
100
100
T
C
= 125_C
50
3V
2V
50
25_C
–55_C
0
10
0
1
2
3
4
5
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
200
r
DS(on)
– On-Resistance (
W
)
T
C
= –55_C
g
fs
– Transconductance (S)
160
25_C
120
125_C
80
0.008
On-Resistance vs. Drain Current
0.006
V
GS
= 4.5 V
V
GS
= 10 V
0.004
0.002
40
0
0
20
40
60
80
100
0.000
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
7000
6000
C – Capacitance (pF)
C
iss
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
C
oss
C
rss
0
0
50
V
GS
– Gate-to-Source Voltage (V)
20
Gate Charge
16
V
DS
= 20 V
I
D
= 75 A
12
8
4
100
150
200
250
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70774
S-05110—Rev. F, 10-Dec-01
www.vishay.com
2-3
SUP/SUB75N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
I
S
– Source Current (A)
2.0
100
Source-Drain Diode Forward Voltage
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.5
T
J
= 150_C
T
J
= 25_C
10
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
100
500
10
ms
100
ms
Safe Operating Area
80
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
Limited
by r
DS(on)
60
1 ms
10
T
C
= 25_C
Single Pulse
10 ms
100 ms
dc
40
20
0
0
25
50
75
100
125
150
175
1
0.1
1
10
100
T
A
– Ambient Temperature (_C)
2
1
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
Document Number: 70774
S-05110—Rev. F, 10-Dec-01
www.vishay.com
2-4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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