AP4028EM
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
Low On-resistance
▼
RoHS Compliant & Halogen-Free
SO-8
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
SG
S
S
30V
9mΩ
12.8A
I
D
Description
AP4028 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G
D
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
.
Rating
30
+20
12.8
10.3
50
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
Data and specifications subject to change without notice
1
201412301
AP4028EM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=6A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
6.7
11.3
1.7
35
-
-
12.5
4
6
10
8
25
7
185
150
1.1
Max. Units
-
9
20
3
-
10
+30
20
-
-
-
-
-
-
-
-
2.2
V
mΩ
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1530 2450
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=2A, V
GS
=0V
I
S
=12A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
13
5
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4028EM
60
50
T
A
= 25 C
50
o
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
10V
8.0V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
= 150
o
C
40
30
30
10V
8.0V
7.0V
6.0V
5.0V
V
G
= 4.0V
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
Fig 2. Typical Output Characteristics
2.0
I
D
=6A
T
A
=25
o
C
14
I
D
= 12 A
V
G
=10V
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
12
10
.
1.2
0.8
8
6
0.4
2
4
6
8
10
-100
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
20
I
D
=250uA
16
1.6
T
j
=150
o
C
I
S
(A)
12
T
j
=25
o
C
Normalized V
GS(th)
1.2
8
0.8
4
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-100
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4028EM
f=1.0MHz
8
2000
V
GS
, Gate to Source Voltage (V)
I
D
=6A
V
DS
=15V
1600
6
C
iss
C (pF)
1200
4
800
2
400
0
0
4
8
12
16
20
0
C
oss
C
rss
1
5
9
13
17
21
25
29
33
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
I
D
(A)
100us
1ms
1
0.1
10ms
100ms
0.1
.
0.1
P
DM
t
T
0.05
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
0.02
0.01
R
thja
= 125℃/W
1s
T
A
=25 C
Single Pulse
0.01
o
Single Pulse
DC
1
10
100
0.01
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
16
V
DS
=5V
40
I
D
, Drain Current (A)
I
D
, Drain Current (A)
T
j
=150 C
T
j
=25 C
T
j
= -55
o
C
o
o
0
1
2
3
4
5
6
12
30
8
20
4
10
0
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Ambient
Temperature
4
AP4028EM
2
3.2
I
D
=1mA
1.6
P
D
, Power Dissipation(W)
-50
0
50
100
150
2.4
Normalized BV
DSS
1.2
1.6
0.8
0.8
0.4
0
-100
0
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
A
, Ambient Temperature(
o
C)
Fig 13. Normalized BV
DSS
v.s. Junction
Temperature
24
Fig 14. Total Power Dissipation
T
j
=25
o
C
20
R
DS(ON)
(m
Ω
)
16
V
GS
=4.0V
12
4.5V
5.0V
.
8
V
GS
=10V
4
0
10
20
30
40
50
60
I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
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