74HCT08
Quad 2-Input AND Gate
With LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS
The 74HCT08 is identical in pinout to the LS08. The device has
TTL−compatible inputs.
Features
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MARKING
DIAGRAMS
14
14
1
SOIC−14
D SUFFIX
CASE 751A
1
HCT08G
AWLYWW
•
•
•
•
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
TTL/NMOS−Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0
mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
ESD Performance: HBM
>
2000 V; Machine Model
>
200 V
Chip Complexity: 24 FETs or 6 Equivalent Gates
These are Pb−Free Devices
LOGIC DIAGRAM
A1
B1
A2
B2
A3
B3
A4
B4
1
3
2
4
6
5
9
8
10
12
11
13
PIN 14 = V
CC
PIN 7 = GND
Y4
Y3
Y2
Y = AB
Y1
14
14
1
TSSOP−14
DT SUFFIX
CASE 948G
1
HCT
08
ALYW
G
G
HCT08 = Device Code
A
= Assembly Location
WL or L = Wafer Lot
Y
= Year
WW or W = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
FUNCTION TABLE
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
L
L
L
H
Pinout: 14−Lead Packages
(Top View)
V
CC
14
B4
13
A4
12
Y4
11
B3
10
A3
9
Y3
8
ORDERING INFORMATION
1
A1
2
B1
3
Y1
4
A2
5
B2
6
Y2
7
GND
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
May, 2009
−
Rev. 2
1
Publication Order Number:
74HCT08/D
74HCT08
ORDERING INFORMATION
Device
74HCT08DR2G
74HCT08DR2GH
74HCT08DTR2G
Package
SOIC−14
(Pb−Free)
SOIC−14
(Halide−Free)
TSSOP−14*
2500/Tape & Reel
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol
V
CC
V
in
I
in
I
out
I
CC
P
D
T
stg
T
L
V
out
Parameter
Value
Unit
V
V
V
mA
mA
mA
mW
_C
_C
260
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
– 0.5 to + 7.0
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air,
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
SOIC Package†
TSSOP Package†
– 0.5 to V
CC
+ 0.5
±20
±25
±50
500
450
– 65 to + 150
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND
v
(V
in
or V
out
)
v
V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package:
−
6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
in
V
out
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
(Figure 1)
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Min
4.5
0
0
−55
0
0
0
Max
5.5
5.5
V
CC
+125
1000
500
400
Unit
V
V
V
_C
ns
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2
74HCT08
DC CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
V
IH
V
IL
V
OH
Parameter
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output
Voltage
Condition
V
out
= 0.1V
|I
out
|
≤
20mA
V
out
= V
CC
−
0.1V
|I
out
|
≤
20mA
V
in
= V
IL
|I
out
|
≤
20mA
V
in
= V
IL
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IH
|I
out
|
≤
20mA
V
in
= V
IH
I
in
I
CC
Maximum Input Leakage Current
Maximum Quiescent Supply
Current (per Package)
Additional Quiescent Supply
Current
V
in
= V
CC
or GND
V
in
= V
CC
or GND
I
out
= 0mA
V
in
= 2.4V, Any One Input
V
in
= V
CC
or GND, Other Inputs
I
out
= 0mA
|I
out
|
≤
4.0mA
|I
out
|
≤
4.0mA
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
Guaranteed Limit
−55
to 25°C
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
±0.1
2.0
≤85°C
2.0
2.0
0.8
0.8
4.4
5.4
3.84
0.1
0.1
0.33
±1.0
20
≤125°C
2.0
2.0
0.8
0.8
4.4
5.4
3.70
0.1
0.1
0.40
±1.0
40
mA
mA
V
Unit
V
V
V
DI
CC
≥
−55°C
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I
CC
+
ΣDI
CC
.
AC CHARACTERISTICS
(C
L
= 50pF, Input t
r
= t
f
= 6ns)
Symbol
t
PLH
,
t
PHL
t
TLH
,
t
THL
C
in
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
Maximum Input Capacitance
V
CC
(V)
4.5
4.5
Guaranteed Limit
−55
to 25°C
15
15
10
≤85°C
19
19
10
≤125°C
22
22
10
Unit
ns
ns
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V, V
EE
= 0 V
C
PD
Power Dissipation Capacitance (Per Buffer)*
20
pF
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC 2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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3
74HCT08
t
r
90%
INPUT
A OR B
t
PLH
90%
OUTPUT Y
50%
10%
t
TLH
t
THL
50%
10%
t
PHL
t
f
V
CC
GND
Figure 1. Switching Waveforms
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
C
L
*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
A
B
Y
Figure 3. Expanded Logic Diagram
(1/4 of the Device)
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4
74HCT08
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
−A−
14
8
−B−
P
7 PL
0.25 (0.010)
M
B
M
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
G
C
−T−
SEATING
PLANE
R
X 45
_
F
D
14 PL
0.25 (0.010)
M
K
T B
S
M
A
S
J
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
_
7
_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0
_
7
_
0.228 0.244
0.010 0.019
SOLDERING FOOTPRINT*
7X
7.04
1
0.58
14X
14X
1.52
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
嵌入式系统
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