ADC, Proprietary Method, 16-Bit, 1 Func, 2 Channel, Parallel, Word Access, Hybrid, CDIP32, DOUBLE WIDTH, SIDE BRAZED, HERMETIC SEALED, DIP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Spectrum Microwave |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP32,.6 |
| 针数 | 32 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最大模拟输入电压 | 10 V |
| 最小模拟输入电压 | -10 V |
| 最长转换时间 | 16.25 µs |
| 转换器类型 | ADC, PROPRIETARY METHOD |
| JESD-30 代码 | R-CDIP-T32 |
| JESD-609代码 | e0 |
| 长度 | 41.91 mm |
| 最大线性误差 (EL) | 0.0015% |
| 标称负供电电压 | -15 V |
| 模拟输入通道数量 | 2 |
| 位数 | 16 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出位码 | BINARY, OFFSET BINARY |
| 输出格式 | PARALLEL, WORD |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP32,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | 5,+-15 V |
| 认证状态 | Not Qualified |
| 采样速率 | 0.047 MHz |
| 采样并保持/跟踪并保持 | TRACK |
| 筛选级别 | MIL-STD-883 Class B (Modified) |
| 座面最大高度 | 6.1 mm |
| 标称供电电压 | 15 V |
| 表面贴装 | NO |
| 技术 | HYBRID |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 15.24 mm |
| MN6450T/B | MN6450T | MN6450T/BCH | |
|---|---|---|---|
| 描述 | ADC, Proprietary Method, 16-Bit, 1 Func, 2 Channel, Parallel, Word Access, Hybrid, CDIP32, DOUBLE WIDTH, SIDE BRAZED, HERMETIC SEALED, DIP-32 | ADC, Proprietary Method, 16-Bit, 1 Func, 2 Channel, Parallel, Word Access, Hybrid, CDIP32, DOUBLE WIDTH, SIDE BRAZED, HERMETIC SEALED, DIP-32 | ADC, Proprietary Method, 16-Bit, 1 Func, 2 Channel, Parallel, Word Access, Hybrid, CDIP32, DOUBLE WIDTH, SIDE BRAZED, HERMETIC SEALED, DIP-32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Spectrum Microwave | Spectrum Microwave | Spectrum Microwave |
| 零件包装代码 | DIP | DIP | DIP |
| 包装说明 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 |
| 针数 | 32 | 32 | 32 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最大模拟输入电压 | 10 V | 10 V | 10 V |
| 最小模拟输入电压 | -10 V | -10 V | -10 V |
| 最长转换时间 | 16.25 µs | 16.25 µs | 16.25 µs |
| 转换器类型 | ADC, PROPRIETARY METHOD | ADC, PROPRIETARY METHOD | ADC, PROPRIETARY METHOD |
| JESD-30 代码 | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 |
| JESD-609代码 | e0 | e0 | e0 |
| 长度 | 41.91 mm | 41.91 mm | 41.91 mm |
| 最大线性误差 (EL) | 0.0015% | 0.0015% | 0.0015% |
| 标称负供电电压 | -15 V | -15 V | -15 V |
| 模拟输入通道数量 | 2 | 2 | 2 |
| 位数 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C |
| 输出位码 | BINARY, OFFSET BINARY | BINARY, OFFSET BINARY | BINARY, OFFSET BINARY |
| 输出格式 | PARALLEL, WORD | PARALLEL, WORD | PARALLEL, WORD |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP |
| 封装等效代码 | DIP32,.6 | DIP32,.6 | DIP32,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5,+-15 V | 5,+-15 V | 5,+-15 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 采样速率 | 0.047 MHz | 0.047 MHz | 0.047 MHz |
| 采样并保持/跟踪并保持 | TRACK | TRACK | TRACK |
| 座面最大高度 | 6.1 mm | 6.1 mm | 6.1 mm |
| 标称供电电压 | 15 V | 15 V | 15 V |
| 表面贴装 | NO | NO | NO |
| 技术 | HYBRID | HYBRID | HYBRID |
| 温度等级 | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm |
| 筛选级别 | MIL-STD-883 Class B (Modified) | - | MIL-PRF-38534 Class H |
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