AP4002H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristics
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
5Ω
2A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4002J) are
available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
+30
2
8
20
0.16
2
Units
V
V
A
A
W
W/℃
mJ
A
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
20
2
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
6.25
62.5
110
Unit
℃/W
℃/W
℃/W
1
201501295
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP4002H/J-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=1A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2A
V
DS
=600V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=2A
V
DS
=480V
V
GS
=10V
V
DD
=200V
I
D
=1A
R
G
=50Ω,V
GS
=10V
R
D
=200Ω
V
GS
=0V
V
DS
=10V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.5
-
-
12
2
5.5
10
12
52
19
375
170
45
Max. Units
-
5
4
-
100
+1
19
-
-
-
-
-
-
600
-
-
V
Ω
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
T
j
=25℃, I
S
=2A, V
GS
=0V
I
S
=2A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
340
2.2
Max. Units
1.5
-
-
V
ns
uC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25 C , V
DD
=50V , L=10mH , R
G
=25Ω
3.Pulse test
2
4.Surface mounted on 1 in copper pad of FR4 board
o
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4002H/J-HF
2
2
T
C
=25 C
I
D
, Drain Current (A)
o
I
D
, Drain Current (A)
1.5
10V
7.0V
6.0V
T
C
=150 C
1.5
o
10V
7.0V
6.0V
5.0V
1
1
5.0V
V
G
= 4.5 V
0.5
0.5
V
G
= 4.5 V
0
0
4
8
12
0
0
4
8
12
16
20
24
28
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=1A
V
G
=10V
Normalized BV
DSS
Normalized R
DS(ON)
1.1
2
1
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.2
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1
6
T
j
= 150 C
4
o
o
T
j
= 25 C
Normalized V
GS(th)
1.4
I
S
(A)
0.8
0.6
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4002H/J-HF
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
10
I
D
=2A
V
DS
=480V
100
C
iss
8
C
oss
6
C (pF)
C
rss
4
10
2
0
0
4
8
12
16
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
1
0.2
I
D
(A)
1ms
10ms
100ms
1s
DC
0.1
0.1
0.05
P
DM
0.1
t
0.02
0.01
T
c
=25
o
C
Single Pulse
0.01
1
10
100
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4002H/J-HF
MARKING INFORMATION
TO-251
Part Number
4002J
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
Part Number
4002H
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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