AP2P052N
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 1.8V Gate Drive
▼
Small Package Outline
▼
Surface Mount Device
▼
RoHS Compliant & Halogen-Free
SOT-23S
G
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
3
-20V
52mΩ
-4A
D
Description
AP2P052 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
.
Rating
- 20
+8
-4
-3.2
-16
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
100
Unit
℃/W
1
201511301
Data and specifications subject to change without notice
AP2P052N
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-3A
V
GS
=-1.8V, I
D
=-1A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-4A
V
DS
=-16V, V
GS
=0V
V
GS
= +8V, V
DS
=0V
I
D
=-4A
V
DS
=-10V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-5V
V
GS
=0V
V
DS
=-10V
f=1.0MHz
Min.
-20
-
-
-
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
12
-
-
9
1.5
1.2
7
14
37
30
900
120
100
-
Max. Units
-
52
65
90
-1
-
-10
+100
14.4
-
-
-
-
-
-
1440
V
mΩ
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1A, V
GS
=0V
I
S
=-4A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
24
7
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2P052N
12
10
T
A
=25 C
10
o
-I
D
, Drain Current (A)
8
-I
D
, Drain Current (A)
-5.0V
-4.5V
-3.5V
-2.5V
-2.0V
V
G
= -1.5V
T
A
= 150
o
C
8
6
-5.0V
-4.5V
-3.5V
-2.5V
-2.0V
65mΩ
V
G
= -1.5V
6
4
4
2
2
0
0
1
2
3
4
0
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I
D
= -1A
T
A
=25 C
70
o
I
D
= -4A
V
GS
= -4.5V
1.6
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
60
1.2
50
.
0.8
40
0.4
30
1
2
3
4
5
0
-100
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I
D
= -1mA
1.6
6
T
j
=150
o
C
-I
S
(A)
T
j
=25
o
C
Normalized V
GS(th)
1.2
4
0.8
2
0.4
2.01E+08
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-100
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2P052N
f=1.0MHz
6
1600
-V
GS
, Gate to Source Voltage (V)
5
I
D
= -4A
V
DS
= -10V
1200
C (pF)
4
65mΩ
800
C
iss
3
2
400
1
C
oss
C
rss
0
0
2
4
6
8
10
12
1
5
9
13
17
21
25
0
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
Operation in this area
limited by R
DS(ON)
-I
D
(A)
100us
1ms
10ms
0.1
0.1
0.05
1
.
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 300℃/W
0.01
Single Pulse
0.1
100ms
T
A
=25
o
C
Single Pulse
1s
DC
1
10
100
0.01
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
5
10
V
DS
= -5V
4
8
-I
D
, Drain Current (A)
3
-I
D
, Drain Current (A)
6
2
4
T
j
=150
o
C
2
1
T
j
=25
o
C
T
j
= -55
o
C
0
25
50
75
100
125
150
0
0
0.5
1
1.5
2
2.5
3
T
A
, Ambient Temperature ( C )
o
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Drain Current v.s. Ambient
Temperature
Fig 12. Transfer Characteristics
4
AP2P052N
2
1.6
I
D
= -1mA
1.6
P
D
, Power Dissipation(W)
-50
0
50
100
150
1.2
Normalized BV
DSS
1.2
0.8
0.8
0.4
0.4
0
-100
0
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
A
, Ambient Temperature(
o
C)
Fig 13. Normalized BV
DSS
v.s. Junction
Temperature
110
Fig 14. Total Power Dissipation
T
j
=25
o
C
90
R
DS(ON)
(m
Ω
)
V
GS
= -1.8V
70
-2.5V
50
.
V
GS
= -4.5V
30
0
2
4
6
8
10
12
-I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
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