AP2314GN
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Lower On-resistance
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
SOT-23S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
20V
75mΩ
3.5A
D
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
.
Rating
20
+12
3.5
2.8
10
0.83
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
150
Unit
℃/W
1
201411286AP
Data and specifications subject to change without notice
AP2314GN
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=3.5A
V
GS
=2.5V, I
D
=1.2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3A
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=3A
V
DS
=16V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=5V
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Min.
20
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7
-
-
4
0.7
2
6
8
10
3
230
55
40
1.1
Max. Units
-
75
125
1.2
-
1
+100
7
-
-
-
-
-
-
370
-
-
2.2
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=0.7A, V
GS
=0V
I
S
=3A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16
8
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 360
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2314GN
15
15
T
A
=25 C
I
D
, Drain Current (A)
o
5.0V
4.5V
3.0V
I
D
, Drain Current (A)
10
T
A
= 150 C
o
5.0V
4.5V
10
3.0 V
2.5V
2.5V
5
5
V
G
= 1. 5V
0
0
1
2
3
0
0
1
2
V
G
= 1 .5V
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.6
I
D
=1.2A
T
A
=25
o
C
1.4
I
D
= 3.5 A
V
G
=4.5V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
80
1.2
.
60
1.0
0.8
40
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
1.2
2
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
1.2
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2314GN
f=1.0MHz
10
1000
I
D
=3A
V
GS
, Gate to Source Voltage (V)
8
C (pF)
6
V
DS
=10V
V
DS
=12V
V
DS
=16V
C
iss
100
4
C
oss
C
rss
2
0
0
2
4
6
8
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
I
D
(A)
Operation in this area
limited by R
DS(ON)
0.2
1
100us
1ms
10ms
100ms
T
A
=25 C
Single Pulse
o
0.1
.
0.1
P
DM
t
0.05
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 360℃/W
0.02
0.01
0.1
1s
DC
1
10
100
Single Pulse
0.01
0.01
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V
DS
=5V
I
D
, Drain Current (A)
V
G
T
j
=150
o
C
10
T
j
=25
o
C
Q
G
4.5V
Q
GS
Q
GD
5
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
AP2314GN
MARKING INFORMATION
Part Number : NH
NHSS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5
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