AP2311GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
▼
RoHS Compliant & Halogen-Free
SOT-23
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
-60V
250mΩ
- 1.8A
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
G
S
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
3
3
.
Rating
- 60
+20
- 1.8
- 1.4
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
201411054
Data and specifications subject to change without notice
AP2311GN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
2
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-60
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.04
200
240
-
2
-
-
-
6
1
3
8
5
22
3
510
50
40
6.4
Max. Units
-
-
250
300
-3
-
-10
-25
+100
10
-
-
-
-
-
-
810
-
-
9.6
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
=-10V, I
D
=-1.8A
V
GS
=-4.5V, I
D
=-1.4A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-1A
V
DS
=-60V, V
GS
=0V
V
GS
=+20V
I
D
=-1A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=30Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-48V, V
GS
=0V
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1.2A, V
GS
=0V
I
S
=-1A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
30
38
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 270
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2311GN-HF
10
10
T
A
=25
o
C
-I
D
, Drain Current (A)
7.5
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T
A
= 150 C
8
o
-10V
-7.0V
-5.0V
-4.5V
5
V
G
= -3.0V
5
V
G
= - 3 .0V
2.5
3
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
250
2.0
I
D
=-1.4A
240
T
A
=25
o
C
1.6
I
D
=-1.8A
V
G
=-10V
230
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.2
220
.
0.8
210
200
2
4
6
8
10
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
2.0
1.5
1.3
T
j
=150
o
C
-I
S
(A)
1.0
T
j
=25
o
C
Normalized V
GS(th)
1.2
1.4
1.0
0.5
0.8
0.0
0
0.2
0.4
0.6
0.8
1
0.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
3
AP2311GN-HF
f=1.0MHz
12
1000
-V
GS
, Gate to Source Voltage (V)
10
I
D
= -1 A
V
DS
= - 48 V
C (pF)
C
iss
8
6
100
4
C
oss
C
rss
2
0
10
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Normalized Thermal Response (R
thja
)
0.2
100us
-I
D
(A)
1
0.1
0.1
0.05
1ms
0.1
.
P
DM
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270℃/W
0.01
T
A
=25 C
Single Pulse
0.001
0.1
1
10
o
10ms
100ms
1s
DC
0.01
Single Pulse
0.001
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
V
DS
=-5V
8
V
G
T
j
=25
o
C
T
j
=150
o
C
-I
D
, Drain Current (A)
Q
G
-4.5V
Q
GS
Q
GD
6
4
2
Charge
0
0
1
2
3
4
5
6
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
AP2311GN-HF
MARKING INFORMATION
Part Number : NG
NGSS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5
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