AP85T03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
6mΩ
75A
S
Description
AP85T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP85T03GJ) are available for low-profile
applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
30
+20
75
55
350
107
0.7
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.4
62.5
110
Units
℃/W
℃/W
℃/W
1
201501056
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP85T03GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
55
-
-
-
33
8
24
24.5
11
77
35
67
550
380
Max. Units
-
-
6
10
3
-
1
250
+100
52
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
39
-
-
-
-
-
-
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=30A
V
DS
=24V
V
GS
=4.5V
V
DD
=15V,V
GS
=0V
V
DS
=15V
I
D
=30A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=24V, V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Output Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2700 4200
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=30A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
10
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T03GH/J-HF
300
150
T
C
=25
o
C
250
I
D
, Drain Current (A)
200
I
D
, Drain Current (A)
10V
7.0V
6.0V
o
T
C
= 175 C
10V
7.0V
6.0V
100
150
4.5V
100
4.5V
V
G
=4.0V
50
V
G
=4.0V
50
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
2.0
11
I
D
=30A
T
c
=25
℃
Normalized R
DS(ON)
1.5
I
D
=45A
V
G
=10V
R
DS(ON)
(m
Ω
)
9
7
1.0
5
3
2
4
6
8
10
0.5
-50
0
50
100
150
200
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
30
2
20
V
GS(th)
(V)
1.2
T
j
=175 C
o
T
j
=25 C
o
1.6
I
S
(A)
1.2
10
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T03GH/J-HF
12
10000
f=1.0MHz
I
D
=30A
10
V
GS
, Gate to Source Voltage (V)
8
V
DS
=15V
V
DS
=20V
V
DS
=24V
C (pF)
1000
C
iss
6
C
oss
4
C
rss
2
0
100
0
10
20
30
40
50
60
70
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
DUTY=0.5
100
100us
0.2
I
D
(A)
0.1
0.1
0.05
1ms
10
P
DM
t
0.02
T
c
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP85T03GH/J-HF
MARKING INFORMATION
TO-251
85T03GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
85T03GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
stm32/stm8
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