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MJW0281A (NPN)
MJW0302A (PNP)
Complementary NPN−PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular MJW3281A and MJW1302A audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
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Preferred Devices
•
Exceptional Safe Operating Area
•
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
•
Excellent Gain Linearity
•
High BVCEO
•
High Frequency
Benefits
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
260 VOLTS
150 WATTS
•
Reliable Performance at Higher Powers
•
Symmetrical Characteristics in Complementary Configurations
•
Accurate Reproduction of Input Signal
•
Greater Dynamic Range
•
High Amplifier Bandwith
Applications
♦
Home
•
High−End Consumer Audio Products
Amplifiers
♦
Home Receivers
•
Professional Audio Amplifiers
♦
Theater and Stadium Sound Systems
♦
Public Address Systems (PAs)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current
− Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ T
C
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
260
260
5.0
260
15
30
1.5
150
− 65 to
+150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
°C
1
2
3
TO−247
CASE 340L
STYLE 3
MARKING DIAGRAM
MJWxxxxA
LLYWW
1 BASE
3 EMITTER
2 COLLECTOR
MJWxxxxA = Device Code
xxxx
= 0281 OR 0302
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MJW0281A
MJW0302A
Package
TO−247
TO−247
Shipping
30 Units/Rail
30 Units/Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 2
Publication Order Number:
MJW0281A/D
MJW0281A (NPN) MJW0302A (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
θJC
Value
0.83
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mA, I
B
= 0)
Collector Cutoff Current
(V
CB
= 260 V, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
(I
C
= 3.0 A, V
CE
= 5.0 V)
Collector−Emitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 0.5 A)
Base−Emitter On Voltage
(I
C
= 5.0 A, V
CE
= 5.0 V)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1.0 A, V
CE
= 5.0 V, f
test
= 1.0 MHz)
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f
test
= 1.0 MHz)
f
T
C
ob
30
−
−
400
MHz
pF
h
FE
75
75
75
V
CE(sat)
V
BE(on)
−
−
150
150
150
1.0
1.2
V
V
−
V
CEO(sus)
I
CBO
I
EBO
260
−
−
−
10
5.0
V
mA
mA
Symbol
Min
Max
Unit
160
P
D
, POWER DISSIPATION (W)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
I
C
, COLLECTOR CURRENT (A)
100
1.0 ms
10
100 ms
1
DC
0.1
5.0 ms
10 ms
0.01
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating
Figure 2. Safe Operating Area
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2
MJW0281A (NPN) MJW0302A (PNP)
500
V
CE
= 5.0 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
100°C
100
−25°C
25°C
500
V
CE
= 5.0 V
100°C
100
−25°C
25°C
10
0.05 0.1
1
10
50
10
0.05 0.1
1
10
50
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. MJW0281A DC Current Gain
Figure 4. MJW0302A DC Current Gain
V
CE
= 5.0 V
1.2
1
−25°C
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.4
2.4
V
CE
= 5.0 V
1.9
1.4
25°C
100°C
0.9
−25°C
100°C
25°C
0.4
−0.1
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
Figure 5. MJW0281A Base−Emitter Voltage
Figure 6. MJW0302A Base−Emitter Voltage
10
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
10
I
C
/I
B
= 10
1
100°C
25°C
0.1
−25°C
1
100°C
0.1
25°C
0.01
0.01
0.1
1
10
100
0.01
0.01
−25°C
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
100
I
C
, COLLECTOR CURRENT (A)
Figure 7. MJW0281A Saturation Voltage
Figure 8. MJW0302A Saturation Voltage
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3
MJW0281A (NPN) MJW0302A (PNP)
60
f
T
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
50
40
30
20
10
0
0.01
f
T
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
V
CE
= 5.0 V
70
60
50
40
30
20
10
0
0.01
25°C
V
CE
= 5.0 V
25°C
0.1
1
10
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 9. MJW0281A Current Gain Bandwidth
Product
Figure 10. MJW0302A Current Gain Bandwidth
Product
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4
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