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MJF31C (NPN),
MJF32C (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
Designed for use in general purpose amplifier and switching
applications.
Features
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•
Collector−Emitter Saturation Voltage
−
•
•
•
•
3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 28 WATTS
4
V
CE(sat)
= 1.2 Vdc (Max) @ I
C
= 3.0 Adc
Collector−Emitter Sustaining Voltage
−
V
CEO(sus)
= 100 Vdc (Min)
High Current Gain
−
Bandwidth Product
f
T
= 3.0 MHz (Min) @ I
C
= 500 mAdc
UL Recognized, File #E69369, to 3500 V
RMS
Isolation
Pb−Free Packages are Available*
1
2
3
TO−220 FULLPAK
CASE 221D
STYLE 2
ÎÎÎ
Î
ÎÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
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Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎ Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
Value
100
100
5.0
3.0
5.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector CurrentUnclamped Inductive
Load Energy (Note 1)
−
Continuous
−
Peak
Base Current
I
B
Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
P
D
E
28
0.22
W
W/_C
W
W/_C
mJ
_C
2.0
0.016
32
Unclamped Inductive Load Energy (Note 1)
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
MARKING DIAGRAM
MJF3xCG
AYWW
x
G
A
Y
WW
= 1 or 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJC
Max
Unit
ORDERING INFORMATION
Device
MJF31C
MJF31CG
MJF32C
MJF32CG
Package
TO−220 FULLPAK
TO−220 FULLPAK
(Pb−Free)
TO−220 FULLPAK
TO−220 FULLPAK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
62.5
4.46
°C/W
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. I
C
= 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100
W.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
Preferred
devices are recommended choices for future use
and best overall value.
July, 2008
−
Rev. 5
1
Publication Order Number:
MJF31C/D
MJF31C (NPN), MJF32C (PNP)
P D, POWER DISSIPATION (WATTS)
t, TIME (
μ
s)
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Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î Î Î Î
Î Î Î
ÎÎÎ Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
ÎÎ Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
Î Î Î
ÎÎÎ Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ Î Î Î
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎ Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Vdc
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
Collector Cutoff Current
V
CEO(sus)
I
CEO
I
CES
100
−
−
−
−
0.3
mAdc
mAdc
200
1.0
−
50
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
h
FE
mAdc
−
ON CHARACTERISTICS
(Note 2)
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
25
10
−
−
Collector−Emitter Saturation Voltage (I
C
= 3.0 Adc, I
B
= 375 mAdc)
Base−Emitter On Voltage (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
V
CE(sat)
V
BE(on)
f
T
1.2
1.8
−
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product (I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
Small−Signal Current Gain (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
3.0
20
MHz
−
h
fe
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
T
C
T
A
40 4.0
30 3.0
20 2.0
T
C
10 1.0
T
A
0
0
0
20
40
60
100
120
80
T, TEMPERATURE (°C)
140
160
Figure 1. Power Derating
TURN-ON PULSE
APPROX
+11 V
V
in
0
V
EB(off)
t
1
t
3
V
CC
R
C
V
in
R
B
C
jd
<< C
eb
t
1
≤
7.0 ns
100 < t
2
< 500
ms
t
3
< 15 ns
- 4.0 V
SCOPE
2.0
1.0
0.7
0.5
0.3
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
I
C
/I
B
= 10
T
J
= 25°C
APPROX
+11 V
V
in
t
2
0.1
0.07
0.05
0.03
0.02
0.03
t
d
@ V
EB(off)
= 2.0 V
TURN-OFF PULSE
DUTY CYCLE
≈
2.0%
APPROX - 9.0 V
Figure 2. Switching Time Equivalent Circuit
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.05 0.07 0.1
0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
Figure 3. Turn−On Time
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2
MJF31C (NPN), MJF32C (PNP)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1.0 k
SINGLE PULSE
0.02
0.05
1.0
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0
100
ms
5.0 ms
2.0
1.0
0.5
SECONDARY BREAKDOWN
LIMITED @ T
J
≤
150°C
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
MJF31C,
CURVES APPLY
MJF32C
BELOW RATED V
CEO
1.0 ms
0.2
0.1
5.0
10
20
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
3.0
2.0
t
s
′
1.0
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
t
f
@ V
CC
= 10 V
t
f
@ V
CC
= 30 V
300
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
- 1/8 t
f
T
J
= 25°C
T
J
= + 25°C
200
CAPACITANCE (pF)
100
C
eb
70
50
C
cb
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
3.0
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn−Off Time
Figure 7. Capacitance
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3
MJF31C (NPN), MJF32C (PNP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
300
hFE, DC CURRENT GAIN
T
J
= 150°C
25°C
- 55°C
V
CE
= 2.0 V
2.0
T
J
= 25°C
1.6
I
C
= 0.3 A
1.0 A
3.0 A
100
70
50
30
1.2
0.8
10
7.0
5.0
0.3
0.5 0.7 1.0
0.03 0.05 0.07 0.1
I
C
, COLLECTOR CURRENT (AMP)
0.4
3.0
0
1.0
2.0
5.0
10
20
50
100
I
B
, BASE CURRENT (mA)
200
500 1000
Figure 8. DC Current Gain
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
Figure 9. Collector Saturation Region
*APPLIES FOR I
C
/I
B
≤
h
FE
/2
T
J
= - 65°C TO + 150°C
*q
VC
FOR V
CE(sat)
q
VB
FOR V
BE
0
0.003 0.005 0.01 0.02 0.03 0.05
- 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
10
3
IC, COLLECTOR CURRENT (
μ
A)
10
2
10
1
10
0
10
-1
10
-2
V
CE
= 30 V
T
J
= 150°C
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHM
10
7
Figure 11. Temperature Coefficients
10
6
10
5
10
4
10
3
10
2
20
I
C
≈
I
CES
I
C
= 10 x I
CES
V
CE
= 30 V
100°C
REVERSE
25°C
I
CES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
FORWARD
I
C
= 2 x I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
40
60
80
100
120
140
160
10
-3
- 0.4 - 0.3 - 0.2 - 0.1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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