UNISONIC TECHNOLOGIES CO., LTD
MJE13009-P
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
NPN SILICON TRANSISTOR
1
TO-220
1
TO-247S
The
MJE13009-P
is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
1
TO-3P
1
TO-3PB
FEATURES
* V
CEO
400V and 300 V
* Reverse Bias SOA with Inductive Loads @ T
C
= 100°C
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C
t
C
@ 8 A, 100°C is 120 ns (Typ).
*700 V Blocking Capability
*SOA and Switching Applications Information.
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
MJE13009L-P-TA3-T
MJE13009G-P-TA3-T
TO-220
MJE13009L-P-T3P-T
MJE13009G-P-T3P-T
TO-3P
MJE13009L-P-T3B-T
MJE13009G-P-T3B-T
TO-3PB
MJE13009L-P-T47S-T
MJE13009G-P-T47S-T
TO-247S
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MJE13009G-P-T3P-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220, T3P: TO-3P, T3B: TO-3PB
T47S: TO-247S
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
MJE13009
L: Lead Free
G: Halogen Free
Date Code
Lot Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 9
QW-R223-008.C
MJE13009-P
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V
CEO
400
V
Collector-Emitter Voltage (V
BE
=-1.5V)
V
CEV
700
V
Emitter Base Voltage
V
EBO
9
V
Continuous
I
C
12
Collector Current
A
Peak (Note 3)
I
CM
24
Continuous
I
B
6
Base Current
A
Peak (Note 3)
I
BM
12
Continuous
I
E
18
Emitter Current
A
Peak (Note 3)
I
EM
36
TO-220
2
Power Dissipation
TO-3P/TO-3PB
5.8
W
TO-247S
4.2
P
D
TO-220
0.016
Derate above 25°C
TO-3P/TO-3PB
1.43
W/°C
TO-247S
1.4
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
THERMAL DATA
PARAMETER
SYMBOL
TO-220
TO-3P/TO-3PB
TO-247S
TO-220
TO-3P/TO-3PB
TO-247S
θ
JA
RATINGS
62.5
21
30
4
0.6
0.625
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JC
°C/W
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QW-R223-008.C
MJE13009-P
PARAMETER
OFF CHARACTERISTICS
(Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
V
CBO
=Rated Value
Emitter Cutoff Current
ON CHARACTERISTICS
(Note)
DC Current Gain
SYMBOL
V
CEO
I
CEV
I
EBO
h
FE1
h
FE 2
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
TEST CONDITIONS
I
C
= 10mA, I
B
= 0
V
BE(OFF)
= 1.5V
DC
V
BE(OFF)
= 1.5V
DC
, T
C
= 100°C
V
EB
= 9V
DC
, I
C
= 0
I
C
= 5A, V
CE
= 5V
I
C
= 8A, V
CE
= 5V
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 8A, I
B
= 1.6A, T
C
= 100°C
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A, T
C
= 100°C
4
180
0.06
0.45
1.3
0.2
0.92
0.12
0.1
1
3
0.7
2.3
0.7
MIN
400
1
5
1
40
30
1
1.5
3
2
1.2
1.6
1.5
TYP
MAX UNIT
V
mA
mA
Current-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
V
V
V
V
V
V
V
MHz
pF
µs
µs
µs
µs
µs
µs
DYNAMIC CHARACTERISTICS
Transition frequency
f
T
I
C
= 500mA, V
CE
= 10V, f = 1MHz
Output Capacitance
C
OB
V
CB
= 10V, I
E
= 0, f = 0.1MHz
SWITCHING CHARACTERISTICS
(Resistive Load, Table 1)
Delay Time
t
DLY
V
CC
= 125Vdc, I
C
= 8A
Rise Time
t
R
I
B1
= I
B2
= 1.6A, t
P
= 25μs
Storage Time
t
S
Duty Cycle ≤1%
Fall Time
t
F
Inductive Load, Clamped
(Table 1, Fig. 13)
Voltage Storage Time
t
S
I
C
=8A, V
CLAMP
=300V, I
B1
=1.6A
V
BE(OFF)
= 5V, T
C
= 100°C
Crossover Time
t
C
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
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3 of 9
QW-R223-008.C
MJE13009-P
+5V
V
CC
1N4933
0.001
µ
F
33
MJE210
NPN SILICON TRANSISTOR
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
+125V
L
MR826*
TEST CIRCUITS
5V
P
W
DUTY CYCLE ≤ 10%
t
R
, t
F
≤ 10 ns
1k
68
1k
+5V
1N4933
33 1N4933
2N2222
R
B
I
B
I
C
V
CLAMP
*SELECTED FOR . 1 kV
V
CE
D.U.T.
2N2905
MJE200
51
R
C
TUT
R
B
SCOPE
5.1k
D1
1k
Note:
P
W
and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
0.02
µ
F
270
47
1/2W
100
-V
BE(OFF)
-4.0V
CIRCUIT VALUES
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200μH/20A
L
COIL
= 200μH
V
CC
= 20V
V
CLAMP
= 300V
DC
V
CC
= 125V
R
C
= 15Ω
D1 = 1N5820 or Equiv.
R
B
= Ω
OUTPUT WAVEFORMS
+10V
25µs
TEST WAVEFORMS
t
F
CLAMPED
I
C
I
CM
t
t
1
V
CE
V
CEM
TIME
t
2
V
CLAMP
t
2
≈
L
COIL
(I
CM
)
V
CLAMP
t
F
t
1
≈
t
F
UNCLAMPED 9 t
2
t1 ADJUSTED TO
OBTAIN IC
L
COIL
(I
CM
)
V
CC
Test Equipment
Scope–Tektronics
475 or Equivalent
0
-8V
t
R
, t
F
< 10 ns
Duty Cycle = 1.0%
R
B
and R
C
adjusted
for desired I
B
and I
C
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4 of 9
QW-R223-008.C
MJE13009-P
CIRCUIT
24A
NPN SILICON TRANSISTOR
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
LOAD LINE DIAGRAMS
TURN–ON (FORWARD BIAS) SOA
t
ON
≤ 10 ms
DUTY CYCLE ≤ 10%
P
D
= 4000 W 2
350V
12A
TURN–ON
TURN–OFF
+
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ V
BE(OFF)
≤ 9.0 V
DUTY CYCLE ≤ 10%
TIME DIAGRAMS
I
C
SERIES SWITCHING
REGULATOR
Collector Current
T
C
= 100°C
t
TIME
V
CE
V
CC
V
CC
V
OUT
V
CC
400V 1
700V
1
COLLECTOR VOLTAGE
t
TIME
RINGING CHOKE
INVERTER
24A
TURN–ON (FORWARD BIAS) SOA
t
ON
≤10
ms
DUTY CYCLE
≤10%
P
D
= 4000 W 2
350V
I
C
Collector Current
V
CC
N
V
OUT
T
C
= 100°C
12A
t
OFF
t
ON
V
CE
V
CC+
N(V
O
)
V
CC
t
LEAKAGE SPIKE
TURN–OFF
TURN–ON
+ V
CC
V
CC
+N(V
OUT)
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤V
BE(off)
≤9.0
V
DUTY CYCLE
≤10%
400V 1
700V
1
t
COLLECTOR VOLTAGE
PUSH–PULL
INVERTER/CONVERTER
24A
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
TURN–ON
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(off)
≤
9.0 V
DUTY CYCLE
≤
10%
2 V
CC
V
CC
400V 1
700V
1
I
C
t
OFF
t
ON
t
V
CE
2 V
CC
V
CC
t
V
OUT
Collector Current
T
C
= 100°C
12A
V
CC
TURN–OFF
+
COLLECTOR VOLTAGE
SOLENOID DRIVER
V
CC
Collector Current
24A
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(OFF)
≤
9.0 V
DUTY CYCLE
≤
10%
2 V
CC
400V 1
700V
1
I
C
T
C
= 100°C
12A
t
ON
V
CE
t
OFF
t
SOLENOID
TURN–OFF
TURN–ON
+
V
CC
V
CC
COLLECTOR VOLTAGE
t
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QW-R223-008.C
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