1N5417.1N5418
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
D
D
D
D
D
D
Glass passivated junction
Hermetically sealed package
Soft recovery characteristics
Low reverse current
Low forward voltage drop
High pulse current capability
94 9588
Applications
Fast rectifiers in S.M.P.S
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
voltage=
Re etitive eak
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Non repetitive reverse
avanlanche energy
t
p
=10ms, single half sine wave
Test Conditions
Type
Symbol
1N5417 –
BYW172D
V
R
=
BYW172F
V
RRM
1N5418 –
BYW172G
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A
E
R
Value
200
300
400
100
3
–65...+175
20
A
A
V
Unit
°
C
mJ
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
Value
25
70
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
I
F
=3A
I
F
=9A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
I
R
t
rr
75
Min
Typ
Max
1.1
1.5
1
20
100
Unit
V
m
A
ns
Document Number 86001
Rev. 4, 27-Sep-00
www.vishay.com
1 (4)
1N5417.1N5418
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
40
1000
V
R
= V
RRM
30
I
R
– Reverse Current (
m
A )
30
16389
100
20
l
10
l
10
0
0
5
10
15
T
L
=constant
20
25
l – Lead Length ( mm )
1
25
50
75
100
125
150
175
T
j
– Junction Temperature (
°C
)
94 9466
Figure 1. Max. Thermal Resistance vs. Lead Length
100.000
Figure 4. Reverse Current vs. Junction Temperature
180
P
R
– Reverse Power Dissipation ( mW )
160
140
120
100
80
60
40
20
0
25
16390
V
R
= V
RRM
I
F
– Forward Current ( A)
10.000
T
j
= 175°C
1.000
0.100
0.010
0.001
0
0.5
1.0
1.5
2.0
2.5
T
j
= 25°C
P
R
–Limit
@100%V
R
P
R
–Limit
@80%V
R
50
75
100
125
150
175
16387
V
F
– Forward Voltage ( V )
T
j
– Junction Temperature (
°C
)
Figure 2. Forward Current vs. Forward Voltage
Figure 5. Max. Reverse Power Dissipation vs.
Junction Temperature
120
C
D
– Diode Capacitance ( pF )
Forward Current ( A )
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80 100 120 140 160 180
16391
V
R
= V
R RM
half sine-
R
thJA
=25K/W
wave
l=10mm
f=1MHz
100
80
60
40
20
0
0.1
–
FAV
Average
R
thJA
=70K/W
PCB: d=25mm
I
1.0
10.0
100.0
16388
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
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2 (4)
Document Number 86001
Rev. 4, 27-Sep 00
1N5417.1N5418
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 86001
Rev. 4, 27-Sep 00
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