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HL6545MG98-A

产品描述Laser Diode, 660nm, ROHS COMPLIANT, LD/MG, 3 PIN
产品类别光电子/LED    光电   
文件大小67KB,共4页
制造商Ushio Opto Semiconductors Inc
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HL6545MG98-A概述

Laser Diode, 660nm, ROHS COMPLIANT, LD/MG, 3 PIN

HL6545MG98-A规格参数

参数名称属性值
厂商名称Ushio Opto Semiconductors Inc
包装说明ROHS COMPLIANT, LD/MG, 3 PIN
Reach Compliance Codeunknown
配置SINGLE
功能数量1
最高工作温度75 °C
最低工作温度-10 °C
光电设备类型LASER DIODE
标称输出功率130 mW
峰值波长660 nm
形状ROUND
尺寸1.6 mm
最大阈值电流75 mA

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HL6545MG
Visible High Power Laser Diode for Recordable-DVD
Description
The HL6545MG is a 0.65
μm
band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various
other types of optical equipment.
ODE2036-00 (M)
Rev.0
Aug. 01, 2008
Features
Operating temperature: 75°C Max
(300 mW(pulse), pw = 30 ns, duty = 35 %)
Visible light output :
λp
= 660 nm Typ
Low operating current:
Iop(1) = 175 mA Typ (Po = 120 mW)
Iop(2) = 350 mA Typ
(Po = 300 mW(pulse), pw = 30 ns, duty = 35 %)
Package Type
HL6545MG: MG
Internal Circuit
1
3
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Symbol
Optical output power
P
O
Pulse optical output power
P
O(pulse)
LD reverse voltage
V
R(LD)
CW Operating temperature
Topr
(CW)
Pulse Operating temperature
Topr
(pulse)
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 30 ns , duty = 35 %
Ratings
130
300 *
2
–10 to +75
–10 to +75
–40 to +85
Unit
mW
mW
V
°C
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current(1)
Operating current(2)
Operating voltage
Lasing wavelength
Beam divergence
parallel to the junction(1)
Beam divergence
perpendicular to the junction
Beam divergence
parallel to the junction(2)
Astigmatism
Symbol
Ith
I
OP
(1)
I
OP
(2)
V
OP
λp
θ//(1)
θ⊥
θ//(2)
A
S
Min
652
7.5
15
7.5
Typ
60
175
350
2.5
660
10.0
17
1
Max
75
210
3.0
664
12.0
19
Unit
mA
mA
mA
V
nm
deg.
deg.
deg.
μm
Test Conditions
P
O
= 120 mW
P
O
= 300 mW(pulse)
pw = 30 ns, duty = 35 %
P
O
= 120 mW
P
O
= 120 mW
P
O
= 120 mW
P
O
= 120 mW
P
O
= 5 mW
P
O
= 5 mW, NA = 0.55
Rev.0 Aug. 01, 2008 page 1 of 4

HL6545MG98-A相似产品对比

HL6545MG98-A HL6545MG-A
描述 Laser Diode, 660nm, ROHS COMPLIANT, LD/MG, 3 PIN Laser Diode, 660nm, ROHS COMPLIANT, LD/MG, 3 PIN
厂商名称 Ushio Opto Semiconductors Inc Ushio Opto Semiconductors Inc
包装说明 ROHS COMPLIANT, LD/MG, 3 PIN ROHS COMPLIANT, LD/MG, 3 PIN
Reach Compliance Code unknown unknown
配置 SINGLE SINGLE
功能数量 1 1
最高工作温度 75 °C 75 °C
最低工作温度 -10 °C -10 °C
光电设备类型 LASER DIODE LASER DIODE
标称输出功率 130 mW 130 mW
峰值波长 660 nm 660 nm
形状 ROUND ROUND
尺寸 1.6 mm 1.6 mm
最大阈值电流 75 mA 75 mA

 
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