AP4957AGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Simple Drive Requirement
D1
D2
D1
D2
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G2
S2
G1
-30V
26mΩ
-7.4A
▼
Dual P MOSFET Package
▼
RoHS Compliant & Halogen-Free
SO-8
S1
Description
AP4957A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
-30
+20
-7.4
-5.9
-30
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Drain Current, V
GS
@ 10V
3
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201501073
AP4957AGM-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-7A
V
GS
=-4.5V, I
D
=-5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-30V, V
GS
=0V
V
GS
=+20V
I
D
=-7A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7
-
-
-
16
2.8
9.3
9
6.5
40
26
Max. Units
-
26
36
-3
-
-1
-25
+100
26
-
-
-
-
-
-
V
m
m
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
1215 1950
190
185
5.3
-
-
8
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.7A, V
GS
=0V
I
S
=-7A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
22
14
Max. Units
-1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135
℃/W
when mounted on Min. copper pad.
2
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4957AGM-HF
40
40
T
A
= 25 C
-I
D
, Drain Current (A)
30
o
20
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T
A
= 150 C
o
30
-10V
-7.0V
-5.0V
-4.5V
20
V
G
=-3.0V
10
V
G
=-3.0V
10
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
36
1.6
I
D
=-5A
T
A
=25
℃
32
I
D
=-7A
V
G
=-10V
1.4
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.2
28
1.0
24
0.8
20
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
8
1.2
6
T
j
=150 C
4
o
T
j
=25 C
o
Normalized V
GS(th)
-I
S
(A)
1.0
0.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.6
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4957AGM-HF
12
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
10
I
D
= -7A
V
DS
= - 24 V
8
C (pF)
6
1000
C
iss
4
2
C
oss
C
rss
100
0
5
10
15
20
25
30
35
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
100us
-I
D
(A)
1ms
1
0.1
0.1
0.05
0.02
10ms
100ms
0.1
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=-5V
T
j
=25 C
o
T
j
=150 C
o
V
G
Q
G
-I
D
, Drain Current (A)
20
-4.5V
Q
GS
10
Q
GD
Charge
0
0
1
2
3
4
5
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP4957AGM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
4957AGM
YWWSSS
5
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