AP4920GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching
▼
RoHS Compliant & Halogen-Free
D1
D1
D2
D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
G2
S2
25V
25mΩ
7A
I
D
SO-8
S1
G1
Description
AP4920 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
25
+20
7
5.7
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Drain Current, V
GS
@ 10V
3
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201501093
AP4920GM-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min. Typ. Max. Units
25
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.037
-
-
25
35
3
-
1
25
-
-
-
-
-
-
-
-
-
-
V
V/℃
m
m
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5.2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=25V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=7A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=6Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
-
14
-
-
-
10.5
1.9
7.5
8
9.5
25
13.5
395
260
105
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V, V
GS
=0V
+100 nA
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
T
j
=25℃, I
S
=2.1A, V
GS
=0V
Min. Typ. Max. Units
-
-
-
-
1.67
1.2
A
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135℃/W when mounted on Min. copper pad.
2
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4920GM-HF
20
20
T
A
=25 C
o
15
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
8.0V
6.0V
5.0V
V
GS
= 4 .0V
T
A
=150
o
C
15
10V
8.0V
6.0V
5.0V
V
GS
= 4 .0V
10
10
5
5
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
I
D
=7A
T
A
=25
℃
40
1.6
I
D
=7A
V
GS
=10
V
Normalized R
DS(ON)
3
4
5
6
7
8
9
10
11
R
DS(ON)
(m
Ω
)
1.4
30
1.2
1.0
20
0.8
10
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP4920GM-HF
8
3
7
6
I
D
, Drain Current (A)
2
5
4
3
1
2
1
P
D
(W)
0
25
50
75
100
125
150
0
50
100
150
0
T
c
, Case Temperature (
o
C)
T
c
,Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
Normalized Thermal Response (R
thja
)
0.2
10
1ms
I
D
(A)
10ms
1
0.1
0.1
0.05
100ms
1s
0.1
0.02
0.01
P
DM
0.01
t
T
Single Pulse
10s
T
A
=25
o
C
Single Pulse
DC
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP4920GM-HF
12
f=1.0MHz
10000
10
V
GS
, Gate to Source Voltage (V)
I
D
=7A
V
DS
=15V
8
1000
6
C (pF)
Ciss
Coss
100
4
Crss
2
0
0
2
4
6
8
10
12
14
16
18
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
3
2.5
10.00
2
I
S
(A)
1.00
V
GS(th)
(V)
1.3
1.5
T
j
=150 C
o
T
j
=25 C
o
1.5
1
0.10
0.5
0.01
0.1
0.3
0.5
0.7
0.9
1.1
0
-50
0
50
100
150
V
SD
(V)
T
j
,Junction Temperature ( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
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