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MSPSMBJ85E3TR

产品描述Trans Voltage Suppressor Diode, 600W, 85V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小204KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

MSPSMBJ85E3TR概述

Trans Voltage Suppressor Diode, 600W, 85V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

MSPSMBJ85E3TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-214AA
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压115 V
最小击穿电压94.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1.38 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压85 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
SMBJ5.0 thru SMBJ170A, CA, e3
and SMBG5.0 thru SMBG170A, CA, e3
SCOTTSDALE DIVISION
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
DESCRIPTION
This SMBJ5.0-170A or SMBG5.0-170A series of surface mount 600 W
Transient Voltage Suppressors (TVSs) protects a variety of voltage-sensitive
components from destruction or degradation. It is available in J-bend design
(SMBJ) with the DO-214AA package for greater PC board mounting density or
in a Gull-wing design (SMBG) in the DO-215AA for visible solder connections.
It is also available in both unidirectional and bidirectional configurations with a
C or CA suffix part number as well as RoHS Compliant with an e3 suffix. Their
response time is virtually instantaneous. As a result, they can be used for
protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4, or for
inductive switching environments and induced RF protection. They can also
protect from secondary lightning effects per IEC61000-4-5 and class levels
defined herein. Microsemi also offers numerous other TVS products to meet
higher and lower power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
FEATURES
Available in both unidirectional and bidirectional
construction (add C or CA suffix for bidirectional)
Selections for 5.0 to 170 volts standoff voltages (V
WM
)
Optional 100%
screening for avionics grade
is available
by adding MA prefix to part number for 100% temperature
cycle -55
o
C to +125
o
C (10X) as well as surge (3X) and 24
hours HTRB with post test V
Z
& I
R
(in operating direction
for unidirectional or both directions for bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS by adding MQ, MX,
MV, or MSP prefixes respectively to part numbers.
Axial-lead equivalent packages for thru-hole mounting
available as P6KE6.8 to P6KE200CA (consult factory for
other surface mount options)
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
APPLICATIONS / BENEFITS
Economical surface mount design in both J-bend or
Gull-wing terminations
Protects sensitive components such as IC’s, CMOS,
2
Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: SMB 5.0 to SMB 120A or CA
Class 2: SMB 5.0 to SMB 60A or CA
Class 3: SMB 5.0 to SMB 30A or CA
Class 4: SMB 5.0 to SMB 15A or CA
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1: SMB 5.0 to SMB 36A or CA
Class 2: SMB 5.0 to SMB 18A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 600 watts at
10/1000
μs
(also see Fig 1,2, and 3).
Impulse repetition rate (duty factor): 0.01%
t
clamping
(0 volts to
V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 25
º
C/W junction to lead, or 90
º
C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
o
Steady-State Power dissipation: 5 watts at T
L
= 25 C, or
1.38 watts at T
A
= 25
º
C when mounted on FR4 PC board
with recommended footprint
Forward Surge at 25ºC: 100 Amps peak impulse of 8.3
ms half-sine wave (unidirectional only)
Solder temperatures: 260
º
C for 10 s (maximum)
Copyright
©
2005
8-04-2005 REV G
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Gull-wing or C-bend (modified J-bend)
tin-lead or RoHS compliant annealed matte-tin plating
solderable per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band. No marking
on bi-directional devices
MARKING: Part number without standard prefix (e.g.
5.0, 5.0A, 5.0CA, 5.0Ae3, 36, MX36A, 36CAe3, etc.)
TAPE & REEL option: Standard per EIA-481-1-A with
12 mm tape, 750 per 7 inch reel or 2500 per 13 inch
reel (add “TR” suffix to part number)
WEIGHT: 0.1 grams
See package dimension on last page
SMB5.0– 170AC, e3
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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