1N6073US thru 1N6081US
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
APPEARANCE
Package “A”
(or “D-5A”)
WWW .
Microsemi
.C
OM
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability
applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated
rectifiers (T
EC
=70ºC) in different package sizes with working peak reverse
voltages from 50 to 150 volts are hermetically sealed using voidless-glass
construction and an internal “Category I” metallurgical bond. These devices
are also available in axial-lead package configurations for through-hole
mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru
1N6081). Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and
surface mount packages.
Package “E”
(or “D-5B”)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Package “G”
(or “D-5C”)
FEATURES
•
•
•
•
•
•
Popular 1N6073US to 1N6081US series
Voidless hermetically-sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
Options for screening in accordance with MIL-PRF-
19500/503 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or MSP prefix respectively , e.g.
MX6076, MV6079, MSP6081, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6073 thru 1N6081)
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance for higher power
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
•
MAXIMUM RATINGS
•
Junction Temperature: -65
o
C to +155
o
C
•
Storage Temperature: -65
o
C to +155
o
C
•
Peak Forward Surge Current @ 25
o
C: 35 Amps for
1N6073US-6075US, 75 Amps for 1N6076US-6078US,
and 175 Amps for 1N6079US-6081US at 8.3 ms half-
sine wave
•
Average Rectified Forward Current (I
O
) at T
EC
= +70
o
C:
1N6073US thru 1N6075US: 3.0 Amps
1N6076US thru 1N6078US: 6.0 Amps
1N6079US thru 1N6081US: 12.0 Amps
Average Rectified Forward Current (I
O
) at T
A
=55
o
C:
1N6073US thru 1N6075US: 0.85 Amps
1N6076US thru 1N6078US: 1.3 Amps
1N6079US thru 1N6081US: 2.0 Amps
•
Thermal Resistance (R
θ
JEC
): 13
o
C/W for 1N6073US-
o
6075US, 8.5 C/W for 1N6076US-6078US, and
o
5.0 C/W for 1N6079US-6081US
o
•
Solder temperature: 260 C for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead finish.
MARKING: None
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 1N6073 thru 1N6075: 193 mg
1N6076 thru 1N6078: 539 mg
1N6079 thru 1N6081: 1100 mg
See package dimensions and recommended pad
layouts on last page for all three package sizes
•
•
•
•
1N6073US─1N6081US
•
Copyright
©
2007
1-17-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6073US thru 1N6081US
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
WWW .
Microsemi
.C
OM
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C
unless otherwise specified
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
50
100
150
50
100
150
50
100
150
MAXIMUM
FORWARD
VOLTAGE
(PULSED)
V
F
VOLTS
2.04
2.04
2.04
1.76
1.76
1.76
1.50
1.50
1.50
@
TYPE
PULSED
TEST
CURRENT
AVERAGE
RECTIFIED
CURRENT I
O
@
T
EC
= 70ºC
AMPS
3.0
3.0
3.0
6.0
6.0
6.0
12.0
12.0
12.0
AVERAGE
RECTIFIED
CURRENT I
O
@
T
A
= 55ºC
AMPS
0.85
0.85
0.85
1.3
1.3
1.3
2.0
2.0
2.0
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
μA
1.0
1.0
1.0
5.0
5.0
5.0
10.0
10.0
10.0
MAXIMUM
REVERSE
RECOVERY
TIME*
t
rr
ns
30
30
30
30
30
30
30
30
30
MAXIMUM
SURGE
CURRENT
I
FSM
AMPS
35
35
35
75
75
75
175
175
175
1N6073US
1N6074US
1N6075US
1N6076US
1N6077US
1N6078US
1N6079US
1N6080US
1N6081US
I
F
AMPS
9.4
9.4
9.4
18.8
18.8
18.8
37.7
37.7
37.7
*NOTE: I
F
= 0.5 A, I
RM
= 1.0 A, and I
R(REC)
= 0.25 A
Symbol
V
BR
V
RWM
V
F
I
R
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
PACKAGE DIMENSIONS
PACKAGE A
(1N6073US thru 1N6075US)
1N6073US─1N6081US
NOTE: This Package Outline has also previously
been identified as “D-5A”
INCHES
MIN
BD
BL
ECT
S
.097
.185
.019
.003
MAX
.103
.200
.028
---
MIN
2.46
4.70
0.48
0.08
mm
MAX
2.62
5.08
0.71
---
A
B
C
PAD LAYOUT
INCHES
0.246
0.067
0.105
mm
6.25
1.70
2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
Copyright
©
2007
1-17-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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