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Datasheet> 器件分类 > 存储> 存储> IBMB3N8734HCB-260T

IBMB3N8734HCB-260T: 产品描述Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168; 产品类别存储存储; 文件大小362KB，共19页; 制造商IBM; 官网地址http://www.ibm.com

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IBMB3N8734HCB-260T概述

Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168

IBMB3N8734HCB-260T规格参数

参数名称	属性值
厂商名称	IBM
零件包装代码	DIMM
包装说明	,
针数	168
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N168
内存密度	603979776 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	168
字数	8388608 words
字数代码	8000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	8MX72
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL

IBMB3N8734HCB-260T相似产品对比

	IBMB3N8734HCB-260T	IBM13N8644HCC-260T	IBMB3N8734HCB-360T	IBMB3N8644HCB-260T	IBM13N8644HCC-10T	IBM13N8644HCC-360T	IBM13N8734HCC-10T	IBM13N8734HCC-260T	IBM13N8734HCC-360T	IBMB3N8644HCB-360T
描述	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX64, 9ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX72, 9ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168
厂商名称	IBM	IBM	IBM	IBM	IBM	IBM	IBM	IBM	IBM	IBM
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	,	DIMM, DIMM168	,	,	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	,
针数	168	168	168	168	168	168	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	6 ns	6 ns	6 ns	6 ns	9 ns	6 ns	9 ns	6 ns	6 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	603979776 bit	536870912 bit	603979776 bit	536870912 bit	536870912 bit	536870912 bit	603979776 bit	603979776 bit	603979776 bit	536870912 bi
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	72	64	72	64	64	64	72	72	72	64
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	168	168	168	168	168	168	168	168	168	168
字数	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	8MX72	8MX64	8MX72	8MX64	8MX64	8MX64	8MX72	8MX72	8MX72	8MX64
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
最大时钟频率 (fCLK)	-	100 MHz	-	-	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	-
I/O 类型	-	COMMON	-	-	COMMON	COMMON	COMMON	COMMON	COMMON	-
输出特性	-	3-STATE	-	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
封装代码	-	DIMM	-	-	DIMM	DIMM	DIMM	DIMM	DIMM	-
封装等效代码	-	DIMM168	-	-	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	-
电源	-	3.3 V	-	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-
刷新周期	-	4096	-	-	4096	4096	4096	4096	4096	-
最大待机电流	-	0.008 A	-	-	0.008 A	0.008 A	0.009 A	0.009 A	0.009 A	-
最大压摆率	-	1.12 mA	-	-	0.88 mA	1.12 mA	0.99 mA	1.26 mA	1.26 mA	-
端子节距	-	1.27 mm	-	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-

IBMB3N8734HCB-260T

IBMB3N8734HCB-260T概述

IBMB3N8734HCB-260T规格参数

IBMB3N8734HCB-260T相似产品对比

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