BFQ34
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BFQ34
is primarily designed
for driver and final stages in MATV
system amplifier up to 4.0 GHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
•
P
G
= 12 dB min. at 3 W/ 400 MHz
• η
C
= 50% min. at 3W/ 400 MHz
•
Omnigold™
Metallization System
•
Diffused Emitter-Ballasting resistors
B
C
E
B
D
C
J
E
F
I
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
150 mA
25 V
18 V
2.7 W @ T
C
= 160 °C
-65 °C to +200 °C
-65 °C to +150 °C
15 K/W
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
MINIMUM
inches / mm
G
H
K
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.640 / 16.26
.217 / 5.51
.285 / 7.24
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
C
c
G
UM
F
I
C
= 20 mA
T
C
= 25 °C
TEST CONDITIONS
I
C
= 5.0 mA
I
E
= 5.0 mA
V
CB
= 15 V
V
CE
= 15 V
V
CE
= 15 V
V
CB
= 15 V
V
CE
= 15 V
I
C
= 120 mA
I
C
= 75 mA
I
C
= 150 mA
f = 1.0 MHz
f = 500 MHz
MINIMUM TYPICAL MAXIMUM
18
25
2.0
100
25
25
70
70
2.0
16.3
8.0
2.75
UNITS
V
V
V
µ
A
---
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are Subject to change without notic.
REV. A
1/1
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