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Datasheet> 器件分类 > 分立半导体> 晶体管> 2SJ366-4061

2SJ366-4061: 产品描述Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3; 产品类别分立半导体晶体管; 文件大小113KB，共2页; 制造商SHINDENGEN; 官网地址https://www.shindengen.com

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2SJ366-4061概述

Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3

2SJ366-4061规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	DRAIN
配置	SINGLE
最小漏源击穿电压	60 V
最大漏极电流 (ID)	5 A
最大漏源导通电阻	0.25 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	P-CHANNEL
最大脉冲漏极电流 (IDM)	20 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
晶体管元件材料	SILICON
Base Number Matches	1

2SJ366-4061相似产品对比

	2SJ366-4061	2SJ366-4071	2SJ366-4101	F5E6P-4071	F5E6P-4100	F5E6P-4061	F5E6P-4101
描述	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V
最大漏极电流 (ID)	5 A	5 A	5 A	5 A	5 A	5 A	5 A
最大漏源导通电阻	0.25 Ω	0.25 Ω	0.25 Ω	0.25 Ω	0.25 Ω	0.25 Ω	0.25 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大脉冲漏极电流 (IDM)	20 A	20 A	20 A	20 A	20 A	20 A	20 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	-	-	-	SHINDENGEN	SHINDENGEN	SHINDENGEN	SHINDENGEN

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