DDR DRAM, 128MX8, 0.7ns, CMOS, PDSO66
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Micron Technology |
| 包装说明 | TSSOP, TSSOP66,.46 |
| Reach Compliance Code | compliant |
| 最长访问时间 | 0.7 ns |
| 最大时钟频率 (fCLK) | 167 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 2,4,8 |
| JESD-30 代码 | R-PDSO-G66 |
| 内存密度 | 1073741824 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 8 |
| 端子数量 | 66 |
| 字数 | 134217728 words |
| 字数代码 | 128000000 |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 128MX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSSOP |
| 封装等效代码 | TSSOP66,.46 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 电源 | 2.5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 8192 |
| 连续突发长度 | 2,4,8 |
| 最大待机电流 | 0.01 A |
| 最大压摆率 | 0.525 mA |
| 标称供电电压 (Vsup) | 2.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | GULL WING |
| 端子节距 | 0.635 mm |
| 端子位置 | DUAL |
| MT46V128M8P-6TIT | 550441T300AH2B | MT46V256M4TG-75:A | MT46V64M16P-6TIT | MT46V128M8TG-75:A | |
|---|---|---|---|---|---|
| 描述 | DDR DRAM, 128MX8, 0.7ns, CMOS, PDSO66 | High Ripple, Long Life, Computer Grade | DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 | DDR DRAM, 64MX16, 0.7ns, CMOS, PDSO66 | DDR DRAM, 128MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 |
| 是否Rohs认证 | 符合 | - | 不符合 | 符合 | 不符合 |
| 厂商名称 | Micron Technology | - | Micron Technology | Micron Technology | Micron Technology |
| 包装说明 | TSSOP, TSSOP66,.46 | - | 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 | TSSOP, TSSOP66,.46 | 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 |
| Reach Compliance Code | compliant | - | unknown | compliant | not_compliant |
| 最长访问时间 | 0.7 ns | - | 0.75 ns | 0.7 ns | 0.75 ns |
| 最大时钟频率 (fCLK) | 167 MHz | - | 133 MHz | 167 MHz | 133 MHz |
| I/O 类型 | COMMON | - | COMMON | COMMON | COMMON |
| 交错的突发长度 | 2,4,8 | - | 2,4,8 | 2,4,8 | 2,4,8 |
| JESD-30 代码 | R-PDSO-G66 | - | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 |
| 内存密度 | 1073741824 bit | - | 1073741824 bit | 1073741824 bit | 1073741824 bit |
| 内存集成电路类型 | DDR DRAM | - | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 8 | - | 4 | 16 | 8 |
| 端子数量 | 66 | - | 66 | 66 | 66 |
| 字数 | 134217728 words | - | 268435456 words | 67108864 words | 134217728 words |
| 字数代码 | 128000000 | - | 256000000 | 64000000 | 128000000 |
| 最高工作温度 | 85 °C | - | 70 °C | 85 °C | 70 °C |
| 组织 | 128MX8 | - | 256MX4 | 64MX16 | 128MX8 |
| 输出特性 | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSSOP | - | TSSOP | TSSOP | TSSOP |
| 封装等效代码 | TSSOP66,.46 | - | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | - | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 电源 | 2.5 V | - | 2.5 V | 2.5 V | 2.5 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | - | 8192 | 8192 | 8192 |
| 连续突发长度 | 2,4,8 | - | 2,4,8 | 2,4,8 | 2,4,8 |
| 最大待机电流 | 0.01 A | - | 0.01 A | 0.01 A | 0.01 A |
| 最大压摆率 | 0.525 mA | - | 0.485 mA | 0.535 mA | 0.485 mA |
| 标称供电电压 (Vsup) | 2.5 V | - | 2.5 V | 2.5 V | 2.5 V |
| 表面贴装 | YES | - | YES | YES | YES |
| 技术 | CMOS | - | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | - | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| 端子形式 | GULL WING | - | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.635 mm | - | 0.65 mm | 0.635 mm | 0.65 mm |
| 端子位置 | DUAL | - | DUAL | DUAL | DUAL |
| 峰值回流温度（摄氏度） | - | - | 235 | 260 | 235 |
| 处于峰值回流温度下的最长时间 | - | - | 30 | NOT SPECIFIED | 30 |
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