TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
零件包装代码 | SOT-23 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.6 A |
基于收集器的最大容量 | 8 pF |
集电极-发射极最大电压 | 40 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 75 |
JEDEC-95代码 | TO-236AB |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
最低工作温度 | -65 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
最大关闭时间(toff) | 365 ns |
最大开启时间(吨) | 40 ns |
VCEsat-Max | 1.6 V |
BSR15-T | BSR16T/R | BSR15T/R | BSR16/T3 | BSR16-T | |
---|---|---|---|---|---|
描述 | TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | 600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | 600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
零件包装代码 | SOT-23 | SOT-23 | SOT-23 | SOT-23 | SOT-23 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
基于收集器的最大容量 | 8 pF | 8 pF | 8 pF | 8 pF | 8 pF |
集电极-发射极最大电压 | 40 V | 60 V | 40 V | 60 V | 60 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 75 | 100 | 75 | 100 | 100 |
JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
最低工作温度 | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
最大关闭时间(toff) | 365 ns | 365 ns | 365 ns | 365 ns | 365 ns |
最大开启时间(吨) | 40 ns | 40 ns | 40 ns | 40 ns | 40 ns |
VCEsat-Max | 1.6 V | 1.6 V | 1.6 V | 1.6 V | 1.6 V |
是否Rohs认证 | - | 符合 | - | 符合 | 符合 |
峰值回流温度(摄氏度) | - | 260 | - | NOT SPECIFIED | NOT SPECIFIED |
参考标准 | - | AEC-Q101; IEC-60134 | - | AEC-Q101; IEC-60134 | AEC-Q101; IEC-60134 |
处于峰值回流温度下的最长时间 | - | 40 | - | NOT SPECIFIED | NOT SPECIFIED |
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