The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 5 March 2004.
INCH-POUND
MIL-PRF-19500/609D
5 December 2003
SUPERSEDING
MIL-PRF-19500/609C
7 April 2000
* PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,
TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for controlled forward voltage switching
diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figure 1 (similar to DO-35) and figure 2 (US).
* 1.2.1 Mounting arrangement. See figure 3.
* 1.3 Maximum ratings. T
A
= +25
°
C.
I
O
Types
V
BR
V (pk)
1N6639, 1N6639US
1N6640, 1N6640US
1N6641, 1N6641US
100
75
75
V
RWM
(1)
V (pk)
75
50
50
mA
300
300
300
t
p
= 1/120 s
A (pk)
2.5
2.5
2.5
°
C
-65 to +200
-65 to +200
-65 to +200
I
FSM
T
STG
, T
J
L = .375
°
C/W
150
150
150
R
θ
JL
R
θ
JEC
L=0
°
C/W
40
40
40
Z
θ
JX
°
C/W
25
25
25
(1) For derating, see figures 4, 5, 6, and 7.
Comments, suggestions, or questions on this document should be addressed to: Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
alan.barone@dla.mil.
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/609D
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T
A
= +25
°
C.
V
F4
Types
I
F
= 200
mA
(pulsed)
V dc
1N6639, 1N6639US
1N6640, 1N6640US
1N6641, 1N6641US
I
F
= 500
mA
(pulsed)
V dc
1.2
1.0
1.1
at T
A
= +25
°
C
V
R
= V
RWM
nA dc
100
100
100
at T
A
= +150
°
C
V
R
= V
RWM
µ
A dc
90
90
90
I
F
= 200 mA
ns
10
10
10
I
RM
= I
F
= 10 mA
V
R
= 0
V
F5
I
R1
I
R2
t
fr
t
rr
C
T1
ns
4.0
4.0
5.0
pF
2.5
2.5
3.0
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4 or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3, 4 or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
www.dodssp.dap.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA
19111-5094.)
* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/609D
Symbol
BD
BL
LD
LL
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.056
.080
1.42
2.03
.130
.180
3.30
4.57
.018
.022
0.46
0.56
1.00
1.50
25.40
38.10
Notes
3, 4, 5
3, 4
4
Types 1N6639, 1N6640, and 1N6641.
*
NOTES:
1. Dimensions are in inches
2. Millimeters are given for general information only.
3. The maximum dimension of BD shall apply for dimension BL.
4. The minimum dimension of BD shall apply over at least .065 inch (1.65 mm) of dimension BL.
5. The specified lead diameter applies in the zone between .050 inch (1.27 mm) from the diode body to the
end of the lead. Outside of this zone lead shall not exceed BD.
6. Dimensions are in accordance with ASME Y14.5M.
FIGURE 1. Physical dimensions (DO-35).
3
MIL-PRF-19500/609D
Dimensions
Symbol
BD
BL
ECT
S
Min
.070
.165
.019
.003
Inches
Max
.085
.195
.028
Millimeters
Min
Max
1.78
2.16
4.19
4.95
0.48
0.71
0.08
Types 1N6639US, 1N6640US, and 1N6641US.
* FIGURE 2. Physical dimensions of surface mount (US).
4
MIL-PRF-19500/609D
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
* 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 and 2 herein.
* 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where
a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction.
a. All devices shall be of metallurgically bonded, thermally matched, noncavity-double plug construction in
accordance with the requirements of category I (see MIL-PRF-19500).
b. The 'US' version shall be structurally identical to the non-US versions except for end-cap lead attachment.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
* 3.5.1 Marking for 'US' devices. For 'US' version devices only, all marking may be omitted from the body (except for
cathode band, see 3.6), but shall be retained on the initial container.
3.6 Polarity. Alternatively, the polarity of all types shall be indicated with a contrasting color band to denote the
cathode end. For 'US' suffix devices a minimum of three contrasting color dots spaced around the cathode end of the
device may be used.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
